18179294. SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE simplified abstract (KABUSHIKI KAISHA TOSHIBA)
Contents
- 1 SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE
- 1.1 Organization Name
- 1.2 Inventor(s)
- 1.3 SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE - A simplified explanation of the abstract
- 1.4 Simplified Explanation
- 1.5 Potential Applications
- 1.6 Problems Solved
- 1.7 Benefits
- 1.8 Potential Commercial Applications
- 1.9 Possible Prior Art
- 1.10 Original Abstract Submitted
SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE
Organization Name
Inventor(s)
Saya Shimomura of Komatsu Ishikawa (JP)
Hiroaki Katou of Nonoichi Ishikawa (JP)
SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE - A simplified explanation of the abstract
This abstract first appeared for US patent application 18179294 titled 'SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE
Simplified Explanation
The semiconductor device described in the abstract consists of various components such as electrodes, regions, conductive portions, insulating portions, and a gate electrode. Here is a simplified explanation of the patent application:
- The device includes a first electrode, a second electrode, and different semiconductor regions.
- There are conductive portions within the semiconductor regions and insulating portions separating them.
- A gate electrode is present between certain regions and portions to control the flow of current.
Potential Applications
This technology could be applied in the development of advanced electronic devices such as transistors, sensors, and memory storage units.
Problems Solved
This technology helps in improving the efficiency and performance of semiconductor devices by controlling the flow of current and enhancing conductivity.
Benefits
The benefits of this technology include increased functionality, higher speed, and improved reliability of semiconductor devices.
Potential Commercial Applications
The technology could find applications in the semiconductor industry for the production of high-performance electronic components.
Possible Prior Art
Prior art in the field of semiconductor devices may include similar structures and configurations used in the development of transistors and integrated circuits.
Unanswered Questions
How does this technology compare to existing semiconductor devices in terms of efficiency and performance?
This article does not provide a direct comparison between this technology and existing semiconductor devices in terms of efficiency and performance. Further research or testing may be needed to determine the advantages of this innovation over current solutions.
What are the potential limitations or challenges in implementing this technology on a larger scale for commercial production?
The article does not address the potential limitations or challenges in implementing this technology on a larger scale for commercial production. Factors such as cost, scalability, and manufacturing processes could be important considerations that need to be explored further.
Original Abstract Submitted
According to one embodiment, a semiconductor device includes a first electrode, a second electrode, a first region, a second region, a third region, a first conductive portion, a second conductive portion, a gate electrode, a first insulating portion, a second insulating portion, a third insulating portion, and a fourth insulating portion. The second electrode has a first portion and a second portion extending from the first portion toward the first electrode. The first region is between the first electrode and the second electrode. The second region is between the first region and the second electrode. The third region is between the second semiconductor region and the second electrode. The first conductive portion is in the first semiconductor region. The gate electrode is between the second region and the second portion. The second conductive portion is between the first conductive portion and the gate electrode.
