18178522. SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREOF simplified abstract (TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.)

SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREOF

Organization Name

TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.

Inventor(s)

Yi-Tse Hung of Hsinchu (TW)

Meng-Zhan Li

Tzu-Chiang Chen of Changhua County (TW)

Chao-Ching Cheng of Hsinchu City (TW)

Iuliana Radu of Hsinchu City (TW)

SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREOF - A simplified explanation of the abstract

This abstract first appeared for US patent application 18178522 titled 'SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREOF

Simplified Explanation

The semiconductor device described in the abstract consists of a substrate, a channel layer, a gate structure, source/drain regions, and an insulating layer. The channel layer is positioned on top of the substrate, with the gate structure placed on top of the channel layer. The source/drain regions are located on the substrate at opposite sides of the channel layer, with the insulating layer separating the channel layer from the source/drain regions.

• Substrate: The base material on which the semiconductor device is built.
• Channel Layer: Positioned above the substrate, this layer allows for the flow of current between the source and drain regions.
• Gate Structure: Positioned on top of the channel layer, this structure controls the flow of current through the channel layer.
• Source/Drain Regions: Located on the substrate at opposite sides of the channel layer, these regions facilitate the flow of current.
• Insulating Layer: Placed between the channel layer and the source/drain regions, this layer prevents unwanted current leakage.

Potential Applications

The technology described in this patent application could be applied in various electronic devices such as smartphones, tablets, laptops, and other portable electronic devices.

Problems Solved

This technology helps in improving the performance and efficiency of semiconductor devices by controlling the flow of current and reducing current leakage.

Benefits

The benefits of this technology include enhanced device performance, increased energy efficiency, and improved overall functionality of electronic devices.

Potential Commercial Applications

The potential commercial applications of this technology include the semiconductor industry, consumer electronics manufacturers, and other companies involved in the production of electronic devices.

Possible Prior Art

One possible prior art for this technology could be the development of similar semiconductor devices with insulating layers to prevent current leakage and improve device performance.

How does this technology compare to existing semiconductor devices in terms of performance and efficiency?

This article does not provide a direct comparison between this technology and existing semiconductor devices in terms of performance and efficiency. Further research and testing would be needed to determine the specific advantages of this technology over existing solutions.

What are the potential challenges in implementing this technology on a larger scale for mass production?

This article does not address the potential challenges in implementing this technology on a larger scale for mass production. Factors such as cost, scalability, and manufacturing processes could pose challenges that need to be explored further.

Original Abstract Submitted

A semiconductor device includes a substrate, a channel layer, a gate structure, source/drain regions, and an insulating layer. The channel layer is disposed over the substrate. The gate structure is disposed over the channel layer. The source/drain regions are disposed over the substrate and disposed at two opposite sides of the channel layer. The insulating layer is disposed between the channel layer and the source/drain regions.