18178114. INTEGRATED CIRCUIT DEVICES AND DATA STORAGE SYSTEMS INCLUDING THE SAME simplified abstract (SAMSUNG ELECTRONICS CO., LTD.)
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INTEGRATED CIRCUIT DEVICES AND DATA STORAGE SYSTEMS INCLUDING THE SAME
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INTEGRATED CIRCUIT DEVICES AND DATA STORAGE SYSTEMS INCLUDING THE SAME - A simplified explanation of the abstract
This abstract first appeared for US patent application 18178114 titled 'INTEGRATED CIRCUIT DEVICES AND DATA STORAGE SYSTEMS INCLUDING THE SAME
Simplified Explanation
The patent application describes an integrated circuit device that includes a semiconductor substrate and a common source structure. A vertical stack of memory cell gate electrodes is provided, extending between the common source structure and the substrate. The stack includes a first erase control gate electrode and multiple word lines. A channel structure penetrates through the stack of gate electrodes. A source protrusion pattern is electrically connected to the common source structure and extends through the stack of gate electrodes, opposite a sidewall of the first erase control gate electrode.
- The integrated circuit device includes a vertical stack of memory cell gate electrodes.
- The stack includes a first erase control gate electrode and multiple word lines.
- A channel structure vertically penetrates through the stack of gate electrodes.
- A source protrusion pattern is electrically connected to the common source structure.
- The source protrusion pattern extends through the stack of gate electrodes, opposite a sidewall of the first erase control gate electrode.
Potential applications of this technology:
- Memory devices: The integrated circuit device can be used in memory devices, such as flash memory or non-volatile memory, to improve performance and reliability.
- Semiconductor industry: The technology can be applied in the semiconductor industry to enhance the design and functionality of integrated circuits.
Problems solved by this technology:
- Leakage current: The vertical stack of gate electrodes and the source protrusion pattern help reduce leakage current, improving the efficiency and reliability of the integrated circuit device.
- Interference: The channel structure penetrating through the stack of gate electrodes helps minimize interference between different memory cells, enhancing the overall performance of the device.
Benefits of this technology:
- Improved performance: The integrated circuit device offers improved performance due to reduced leakage current and minimized interference.
- Enhanced reliability: The technology increases the reliability of the device by reducing potential issues related to leakage current and interference.
- Compact design: The vertical stack of gate electrodes and the source protrusion pattern allow for a more compact design, enabling higher integration density and potentially reducing manufacturing costs.
Original Abstract Submitted
An integrated circuit device includes a semiconductor substrate, and a common source structure on the substrate. A vertical stack of memory cell gate electrodes is provided, which extends between the common source structure and the substrate. The vertical stack of memory cell gate electrodes includes a first erase control gate electrode, and a plurality of word lines extending between the first erase control gate electrode and the substrate. At least one channel structure is provided, which vertically penetrates through the vertical stack of memory cell gate electrodes. A source protrusion pattern is provided, which is electrically connected to the common source structure. The source protrusion pattern extends sufficiently through the vertical stack of memory cell gate electrodes that a portion of the source protrusion pattern extends opposite a sidewall of the first erase control gate electrode.
