18177335. SEMICONDUCTOR DEVICE AND ELECTRONIC SYSTEM INCLUDING THE SAME simplified abstract (SAMSUNG ELECTRONICS CO., LTD.)

SEMICONDUCTOR DEVICE AND ELECTRONIC SYSTEM INCLUDING THE SAME

Organization Name

SAMSUNG ELECTRONICS CO., LTD.

Inventor(s)

Kyeonghoon Park of Suwon-si (KR)

Juseong Min of Suwon-si (KR)

Jaebok Baek of Suwon-si (KR)

Donghyuck Jang of Suwon-si (KR)

Sanghun Chun of Suwon-si (KR)

Jeehoon Han of Suwon-si (KR)

Taeyoon Hong of Suwon-si (KR)

SEMICONDUCTOR DEVICE AND ELECTRONIC SYSTEM INCLUDING THE SAME - A simplified explanation of the abstract

This abstract first appeared for US patent application 18177335 titled 'SEMICONDUCTOR DEVICE AND ELECTRONIC SYSTEM INCLUDING THE SAME

Simplified Explanation

The abstract of the patent application describes a semiconductor device that includes various circuit structures, wiring layers, and via contacts. It also includes a plate common source line, an insulating plug, and a lateral insulating spacer. The device further comprises a memory stack structure with gate lines, a through contact, and a source line contact.

• The peripheral circuit structure consists of circuits, wiring layers, and via contacts.
• The plate common source line covers the peripheral circuit structure.
• An insulating plug passes through the plate common source line.
• A lateral insulating spacer is present between the peripheral circuit structure and the plate common source line.
• The memory stack structure includes gate lines on the plate common source line.
• A through contact passes through at least one of the gate lines and the insulating plug.
• The through contact is connected to a first via contact of the via contacts.
• A source line contact passes through the lateral insulating spacer.
• The source line contact is located between a second via contact of the via contacts and the plate common source line.
• The width of the first via contact is greater than the width of the insulating plug in a lateral direction.

Potential applications of this technology:

• Semiconductor devices with improved circuit structures and wiring layers.
• Memory stack structures with efficient gate lines and through contacts.
• Enhanced connectivity and integration in semiconductor devices.

Problems solved by this technology:

• Improved insulation and isolation between different circuit structures.
• Efficient routing of signals and connections within the semiconductor device.
• Enhanced performance and reliability of memory stack structures.

Benefits of this technology:

• Higher integration density in semiconductor devices.
• Improved signal transmission and reduced signal interference.
• Enhanced overall performance and reliability of the device.

Original Abstract Submitted

A semiconductor device includes a peripheral circuit structure including circuits, wiring layers, and via contacts, a plate common source line covering the peripheral circuit structure, an insulating plug passing through the plate common source line, a lateral insulating spacer between the peripheral circuit structure and the plate common source line, a memory stack structure including gate lines on the plate common source line, a through contact passing through at least one of the gate lines and the insulating plug, the through contact being connected to a first via contact of the via contacts, and a source line contact passing through the lateral insulating spacer, the source line contact being between a second via contact of the via contacts and the plate common source line, wherein a width of the first via contact is greater than a width of the insulating plug in a lateral direction.