18177210. METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE AND SEMICONDUCTOR DEVICE simplified abstract (KABUSHIKI KAISHA TOSHIBA)
Contents
- 1 METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE AND SEMICONDUCTOR DEVICE
- 1.1 Organization Name
- 1.2 Inventor(s)
- 1.3 METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE AND SEMICONDUCTOR DEVICE - A simplified explanation of the abstract
- 1.4 Simplified Explanation
- 1.5 Potential Applications
- 1.6 Problems Solved
- 1.7 Benefits
- 1.8 Potential Commercial Applications
- 1.9 Possible Prior Art
- 1.10 Unanswered Questions
- 1.11 Original Abstract Submitted
METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE AND SEMICONDUCTOR DEVICE
Organization Name
Inventor(s)
Tatsuo Shimizu of Shinagawa Tokyo (JP)
METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE AND SEMICONDUCTOR DEVICE - A simplified explanation of the abstract
This abstract first appeared for US patent application 18177210 titled 'METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE AND SEMICONDUCTOR DEVICE
Simplified Explanation
The method described in the patent application involves manufacturing a semiconductor device using silicon carbide layers and ion implantation techniques. Here are the key points explained in bullet form:
- Form a mask material with an opening on a silicon carbide layer surface.
- Create a trench in the silicon carbide layer using the mask material.
- Perform first ion implantation to implant carbon into the bottom of the trench.
- Apply a sidewall material on the side face of the trench.
- Conduct second ion implantation to implant a p-type first impurity into the bottom of the trench.
- Perform heat treatment at 1600°C or higher.
Potential Applications
This technology could be applied in the manufacturing of high-performance semiconductor devices, such as power electronics, RF devices, and sensors.
Problems Solved
This method helps in creating precise and controlled doping profiles in semiconductor devices, improving their performance and reliability.
Benefits
The use of silicon carbide layers and ion implantation techniques can lead to enhanced device efficiency, reduced power consumption, and increased device longevity.
Potential Commercial Applications
This technology could find commercial applications in industries such as automotive, telecommunications, aerospace, and renewable energy.
Possible Prior Art
Prior art may include similar methods of semiconductor device manufacturing using silicon carbide layers and ion implantation techniques, but specific details may vary.
Unanswered Questions
How does the heat treatment at 1600°C or higher affect the properties of the semiconductor device?
The heat treatment process is crucial in activating the dopants and annealing defects in the semiconductor device. It would be interesting to explore the specific effects of this high-temperature treatment on the device performance and reliability.
What are the potential challenges or limitations of using this method in large-scale semiconductor production?
While the method described in the patent application shows promise for manufacturing high-performance semiconductor devices, there may be challenges in scaling up the process for mass production. Understanding the scalability and cost-effectiveness of this technology is essential for its practical implementation in commercial settings.
Original Abstract Submitted
A method of manufacturing a semiconductor device according to an embodiment includes: forming a mask material having an opening on a surface of a silicon carbide layer; forming a trench in the silicon carbide layer using the mask material as a mask; performing first ion implantation for implanting carbon (C) into a bottom face of the trench using the mask material as a mask; forming a sidewall material on a side face of the trench; performing second ion implantation for implanting a p-type first impurity into the bottom face of the trench using the sidewall material as a mask; and performing heat treatment at 1600° C. or more.
