18172246. DEVICE WITH GATE-TO-DRAIN VIA AND RELATED METHODS simplified abstract (Taiwan Semiconductor Manufacturing Company, Ltd.)
Contents
- 1 DEVICE WITH GATE-TO-DRAIN VIA AND RELATED METHODS
- 1.1 Organization Name
- 1.2 Inventor(s)
- 1.3 DEVICE WITH GATE-TO-DRAIN VIA AND RELATED METHODS - A simplified explanation of the abstract
- 1.4 Simplified Explanation
- 1.5 Potential Applications
- 1.6 Problems Solved
- 1.7 Benefits
- 1.8 Potential Commercial Applications
- 1.9 Possible Prior Art
- 1.10 Unanswered Questions
- 1.11 Original Abstract Submitted
DEVICE WITH GATE-TO-DRAIN VIA AND RELATED METHODS
Organization Name
Taiwan Semiconductor Manufacturing Company, Ltd.
Inventor(s)
DEVICE WITH GATE-TO-DRAIN VIA AND RELATED METHODS - A simplified explanation of the abstract
This abstract first appeared for US patent application 18172246 titled 'DEVICE WITH GATE-TO-DRAIN VIA AND RELATED METHODS
Simplified Explanation
The patent application describes a device with multiple stacks of semiconductor nanostructures, gate structures, gate isolation structures, dielectric layers, and vias.
- The device includes a first stack of semiconductor nanostructures, a second stack of semiconductor nanostructures on top of the first stack, and a third stack of semiconductor nanostructures adjacent to the first stack.
- The first gate structure wraps around the first and second stacks, while the second gate structure wraps around the third stack.
- A gate isolation structure separates the first and second gate structures.
- A dielectric layer is on the second gate structure and abuts the gate isolation structure.
- A via is included, with a first portion extending in one direction and a second portion extending in a transverse direction.
Potential Applications
This technology could be applied in:
- Advanced semiconductor devices
- Nanotechnology research
- High-performance computing systems
Problems Solved
This technology addresses issues related to:
- Increasing integration density
- Enhancing device performance
- Improving signal transmission efficiency
Benefits
The benefits of this technology include:
- Higher efficiency in signal transmission
- Improved device performance
- Increased integration density
Potential Commercial Applications
The potential commercial applications of this technology could be in:
- Semiconductor manufacturing industry
- Electronics industry
- Research and development sector
Possible Prior Art
One possible prior art for this technology could be the use of vias in semiconductor devices to improve signal transmission efficiency.
Unanswered Questions
How does this technology compare to existing semiconductor devices in terms of performance and efficiency?
This article does not provide a direct comparison with existing semiconductor devices to evaluate performance and efficiency.
What are the specific materials used in the fabrication of the semiconductor nanostructures in this device?
The article does not mention the specific materials used in the fabrication of the semiconductor nanostructures.
Original Abstract Submitted
A device includes: a first stack of first semiconductor nanostructures; a second stack of second semiconductor nanostructures on the first stack of semiconductor nanostructures; a third stack of first semiconductor nanostructures adjacent the first stack; a first gate structure wrapping around the first stack and the second stack; a second gate structure wrapping around the third stack; a gate isolation structure between the first gate structure and the second gate structure; a dielectric layer on the second gate structure and laterally abutting the gate isolation structure; and a via. The via includes: a first portion that extends in a first direction, the first portion being on the first gate structure, the gate isolation structure and the dielectric layer; and a second portion that extends in a second direction transverse the first direction.
