18171362. LOW-FREQUENCY NOSIE TRANSISTORS WITH CURVED CHANNELS simplified abstract (Taiwan Semiconductor Manufacturing Company, Ltd.)
LOW-FREQUENCY NOSIE TRANSISTORS WITH CURVED CHANNELS
Organization Name
Taiwan Semiconductor Manufacturing Company, Ltd.
Inventor(s)
Shih-Chang Chen of Chiayi County (TW)
LOW-FREQUENCY NOSIE TRANSISTORS WITH CURVED CHANNELS - A simplified explanation of the abstract
This abstract first appeared for US patent application 18171362 titled 'LOW-FREQUENCY NOSIE TRANSISTORS WITH CURVED CHANNELS
Simplified Explanation
The patent application describes a transistor with concentric fins and curved channels for improved performance.
- The transistor includes a substrate with first and second concentric fins protruding upwardly.
- Each fin has straight and curved sections, as well as drain and source components.
- Curved channels are located at the curved sections of the fins for enhanced functionality.
Potential Applications
This technology could be used in:
- High-performance electronic devices
- Advanced computing systems
- Power management applications
Problems Solved
This innovation addresses issues such as:
- Improving transistor efficiency
- Enhancing overall device performance
- Increasing speed and reliability of electronic components
Benefits
The benefits of this technology include:
- Higher transistor density
- Improved power efficiency
- Enhanced signal processing capabilities
Original Abstract Submitted
A transistor includes: a substrate; a first fin and a second fin protruding upwardly from a top surface of the substrate, wherein the first fin and the second fin are concentric, and each of the first fin and the second fin comprises a first straight section, a second straight section in parallel with the first straight section, a first curved section, and a second curved section; a first drain and a second drain; a first source and a second source; a first curved channel and a second curved channel located at the first curved section of the first fin and the first curved section of the second fin, respectively; and a third curved channel and a fourth curved channel located at the second curved section of the first fin and the second curved section of the second fin, respectively.
