18169514. LIGHT DETECTOR, LIGHT DETECTION SYSTEM, AND LIDAR DEVICE simplified abstract (KABUSHIKI KAISHA TOSHIBA)

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LIGHT DETECTOR, LIGHT DETECTION SYSTEM, AND LIDAR DEVICE

Organization Name

KABUSHIKI KAISHA TOSHIBA

Inventor(s)

Keita Sasaki of Yokohama Kanagawa (JP)

Mariko Shimizu of Setagaya Tokyo (JP)

Kazuhiro Suzuki of Meguro Tokyo (JP)

LIGHT DETECTOR, LIGHT DETECTION SYSTEM, AND LIDAR DEVICE - A simplified explanation of the abstract

This abstract first appeared for US patent application 18169514 titled 'LIGHT DETECTOR, LIGHT DETECTION SYSTEM, AND LIDAR DEVICE

Simplified Explanation

The abstract describes a light detector with a unique structure involving multiple semiconductor layers and a photoelectric conversion part.

  • The light detector includes a substrate with a first semiconductor layer, an insulating layer, and a second semiconductor layer.
  • The photoelectric conversion part within the second semiconductor layer consists of a first semiconductor region and a second semiconductor region.
  • A void below the photoelectric conversion part and a trench surrounding it help optimize the performance of the detector.
  • The photoelectric conversion part is electrically connected to the upper surface side of the substrate.

Potential Applications

This technology can be applied in:

  • Solar panels
  • Photodetectors
  • Imaging sensors

Problems Solved

This technology helps in:

  • Improving light detection efficiency
  • Enhancing signal-to-noise ratio

Benefits

The benefits of this technology include:

  • Higher sensitivity to light
  • Improved performance in low-light conditions

Potential Commercial Applications

The potential commercial applications of this technology include:

  • Consumer electronics
  • Aerospace industry
  • Medical devices

Possible Prior Art

There is no prior art known at this time.

Unanswered Questions

How does the size of the trench impact the performance of the light detector?

The abstract does not provide information on how the dimensions of the trench affect the functionality of the light detector.

What materials are used in the semiconductor layers of the light detector?

The abstract does not specify the exact materials used in the semiconductor layers of the light detector.


Original Abstract Submitted

A light detector according to one embodiment, includes a substrate. The substrate includes a first semiconductor layer, an insulating layer, and a second semiconductor layer. The insulating layer is located on the first semiconductor layer. The second semiconductor layer is located on the insulating layer. The second semiconductor layer includes a photoelectric conversion part. The photoelectric conversion part includes a first semiconductor region and a second semiconductor region. The substrate includes a void and a trench. The void is positioned below the photoelectric conversion part and between the first semiconductor layer and the second semiconductor layer. The trench surrounds the photoelectric conversion part. A lower end of the trench is positioned in the second semiconductor layer. The photoelectric conversion part is electrically connected with an upper surface side of the substrate via a portion below the trench.