18169100. SENSE AMPLIFIER AND OPERATING METHOD OF THE SAME simplified abstract (TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.)

SENSE AMPLIFIER AND OPERATING METHOD OF THE SAME

Organization Name

TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.

Inventor(s)

Shigeki Shimomura of Cupertino CA (US)

Yongxi Li of San Jose CA (US)

SENSE AMPLIFIER AND OPERATING METHOD OF THE SAME - A simplified explanation of the abstract

This abstract first appeared for US patent application 18169100 titled 'SENSE AMPLIFIER AND OPERATING METHOD OF THE SAME

Simplified Explanation

The memory device described in the patent application includes a sense amplifier that operates with a first supply voltage and is enabled by an enable signal to receive current signals from the memory array. The sense amplifier consists of a pull-up circuit and a latch circuit, where the pull-up circuit connects the first supply voltage terminal to the nodes in response to a control signal, and the latch circuit generates output signals based on the current signals received from the nodes to determine the data stored in a memory cell.

• Sense amplifier operates with a first supply voltage
• Enabled by an enable signal to receive current signals from the memory array
• Consists of a pull-up circuit and a latch circuit
• Pull-up circuit connects the first supply voltage terminal to the nodes in response to a control signal
• Latch circuit generates output signals based on the current signals received from the nodes to determine the data stored in a memory cell

Potential Applications

This technology could be applied in various memory devices such as RAM, flash memory, and solid-state drives to improve data retrieval and storage efficiency.

Problems Solved

This technology solves the problem of accurately determining the data stored in memory cells by providing a reliable sense amplifier that operates with a first supply voltage.

Benefits

The benefits of this technology include improved data retrieval speed, enhanced memory array performance, and increased overall efficiency in memory devices.

Potential Commercial Applications

The potential commercial applications of this technology include the manufacturing of faster and more reliable memory devices for consumer electronics, data centers, and other computing systems.

Possible Prior Art

One possible prior art for this technology could be the use of sense amplifiers in memory devices, but the specific configuration and operation described in the patent application may be novel and inventive.

How does this technology compare to existing sense amplifier designs in terms of performance and efficiency?

The article does not provide a direct comparison between this technology and existing sense amplifier designs, so it is unclear how they differ in terms of performance and efficiency.

What are the potential limitations or drawbacks of implementing this technology in memory devices?

The article does not address any potential limitations or drawbacks of implementing this technology in memory devices, leaving room for further exploration of its practical implications.

Original Abstract Submitted

A memory device includes a memory array and a sense amplifier. The sense amplifier operates with a first supply voltage and be enabled, in response to an enable signal, to receive first and second current signals from the memory array through first and second nodes, and includes a pull-up circuit and a latch circuit. The pull-up circuit is coupled between a first supply voltage terminal and the first to second nodes, and couples, in response to a first control signal having a low logic state, the first supply voltage terminal to the first and second nodes. The latch circuit generates, in response to the first and second current signals received from the first and second nodes, first and second output signals for determining a data stored in a memory cell in the memory array when the first supply voltage terminal is coupled to the first and second nodes.