18168243. SEMICONDUCTOR DEVICE simplified abstract (TOSHIBA ELECTRONIC DEVICES & STORAGE CORPORATION)

SEMICONDUCTOR DEVICE

Organization Name

TOSHIBA ELECTRONIC DEVICES & STORAGE CORPORATION

Inventor(s)

Shuhei Tokuyama of Nonoichi Ishikawa (JP)

Tsuyoshi Kachi of Kanazawa Ishikawa (JP)

Toshifumi Nishiguchi of Hakusan Ishikawa (JP)

Hiroaki Katou of Nonoichi Ishikawa (JP)

SEMICONDUCTOR DEVICE - A simplified explanation of the abstract

This abstract first appeared for US patent application 18168243 titled 'SEMICONDUCTOR DEVICE

Simplified Explanation

The semiconductor device described in the abstract consists of multiple semiconductor regions and electrodes arranged in a specific configuration. Here is a simplified explanation of the patent application:

• The device includes a first electrode, first semiconductor region, second semiconductor region, third semiconductor region, second electrode, third electrode, fourth electrode, and fifth electrode.
• The electrodes and semiconductor regions are arranged in a specific order and configuration to perform certain functions within the device.

1. 1. 1. Potential Applications

This technology could be used in various electronic devices such as transistors, diodes, and sensors.

1. 1. 1. Problems Solved

This technology solves the problem of improving the performance and efficiency of semiconductor devices by optimizing the arrangement of semiconductor regions and electrodes.

1. 1. 1. Benefits

The benefits of this technology include increased functionality, improved performance, and enhanced efficiency of semiconductor devices.

1. 1. 1. Potential Commercial Applications

This technology could be applied in the manufacturing of advanced electronic devices for various industries such as telecommunications, consumer electronics, and automotive.

1. 1. 1. Possible Prior Art

One possible prior art for this technology could be the development of similar semiconductor devices with different configurations and arrangements of electrodes and semiconductor regions.

1. 1. 1. 1. Unanswered Questions

1. 1. 1. 1. How does this technology compare to existing semiconductor devices in terms of performance and efficiency?

This article does not provide a direct comparison between this technology and existing semiconductor devices in terms of performance and efficiency.

1. 1. 1. 1. What are the specific manufacturing processes involved in producing this semiconductor device?

The article does not detail the specific manufacturing processes involved in producing this semiconductor device.

Original Abstract Submitted

A semiconductor device according to the present embodiment includes: a first electrode; a first semiconductor region of a first conductivity type disposed above the first electrode; a second semiconductor region of a second conductivity type disposed on the first semiconductor region; a third semiconductor region of the first conductivity type disposed on the second semiconductor region; a second electrode disposed in the first semiconductor region; a third electrode facing the second semiconductor region via a second insulating film; a fourth electrode having a portion adjacent to a part of the second semiconductor region and the third semiconductor region in the second direction, the second semiconductor region, and the third semiconductor region; and a fifth electrode disposed in the first insulating film, having a bottom located closer to the first electrode than a bottom of the portion, having a top located on an upper surface of the first insulating film.