18167301. SEMICONDUCTOR DEVICE simplified abstract (KABUSHIKI KAISHA TOSHIBA)

SEMICONDUCTOR DEVICE

Organization Name

KABUSHIKI KAISHA TOSHIBA

Inventor(s)

Toru Sugiyama of Musashino Tokyo (JP)

Noriaki Yoshikawa of Inagi Tokyo (JP)

Yasuhiko Kuriyama of Yokohama Kanagawa (JP)

Akira Yoshioka of Yokohama Kanagawa (JP)

Hitoshi Kobayashi of Yamato Kanagawa (JP)

Hung Hung of Kawasaki Kanagawa (JP)

Yasuhiro Isobe of Ota Tokyo (JP)

Tetsuya Ohno of Yokohama Kanagawa (JP)

Hideki Sekiguchi of Yokohama Kanagawa (JP)

Masaaki Onomura of Setagaya Tokyo (JP)

SEMICONDUCTOR DEVICE - A simplified explanation of the abstract

This abstract first appeared for US patent application 18167301 titled 'SEMICONDUCTOR DEVICE

Simplified Explanation

The semiconductor device described in the abstract includes a first transistor, a first drive circuit with a second transistor, and a second drive circuit with a third transistor. The second and third transistors are connected in series, with a connection node of the two transistors connected to a gate electrode of the first transistor. The transistors are normally-off MOS HEMTs formed in a substrate containing GaN. The first drive circuit charges a parasitic capacitance of the first transistor, while the second drive circuit discharges it.

• First transistor, second transistor, and third transistor are normally-off MOS HEMTs.
• First substrate contains GaN.
• Second and third transistors are connected in series.
• Connection node of second and third transistors is connected to gate electrode of first transistor.
• First drive circuit charges parasitic capacitance of first transistor.
• Second drive circuit discharges parasitic capacitance of first transistor.

Potential Applications

The technology described in the patent application could be applied in:

• Power electronics
• RF amplifiers
• Wireless communication systems

Problems Solved

This technology helps in:

• Improving efficiency in power electronics
• Enhancing performance in RF amplifiers
• Increasing data transmission speeds in wireless communication systems

Benefits

The benefits of this technology include:

• Higher efficiency
• Improved performance
• Faster data transmission

Potential Commercial Applications

The potential commercial applications of this technology could be in:

• Telecommunications industry
• Electronics manufacturing sector
• Aerospace and defense industry

Possible Prior Art

One possible prior art related to this technology is the use of GaN in semiconductor devices for high-power applications. GaN has been known for its high electron mobility and thermal conductivity, making it suitable for power electronics and RF applications.

What is the manufacturing process for these normally-off MOS HEMTs?

The manufacturing process for these normally-off MOS HEMTs involves the formation of GaN-based transistors on a substrate, followed by the integration of drive circuits to control their operation.

How does the discharge of the parasitic capacitance improve the performance of the first transistor?

The discharge of the parasitic capacitance of the first transistor helps in reducing switching losses and improving the overall efficiency of the semiconductor device. By discharging the capacitance quickly, the transistor can switch on and off faster, leading to better performance.

Original Abstract Submitted

A semiconductor device includes a first transistor, a first drive circuit including a second transistor, and a second drive circuit including a third transistor. The second transistor and the third transistor are connected in series; and a connection node of the second and third transistors is connected to a gate electrode of the first transistor. The first transistor, the second transistor, and the third transistor are normally-off MOS HEMTs formed in a first substrate that includes GaN. The first drive circuit charges a parasitic capacitance of the first transistor. The second drive circuit discharges the parasitic capacitance of the first transistor.