18166126. SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING SAME simplified abstract (KABUSHIKI KAISHA TOSHIBA)
Contents
SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING SAME
Organization Name
Inventor(s)
Shunsuke Asaba of Himeji Hyogo (JP)
Hiroshi Kono of Himeji Hyogo (JP)
SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING SAME - A simplified explanation of the abstract
This abstract first appeared for US patent application 18166126 titled 'SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING SAME
Simplified Explanation
The semiconductor device described in the abstract consists of multiple semiconductor layers and electrodes connected in a specific configuration. Here is a simplified explanation of the patent application:
- The device includes a first electrode connected to a first semiconductor layer.
- A second semiconductor layer is located on a portion of the first semiconductor layer.
- A third semiconductor layer is located on a portion of the second semiconductor layer.
- A second electrode is connected to the third semiconductor layer.
- A third electrode is located above at least a portion of the second semiconductor layer.
- The third semiconductor layer is of a first conductivity type and includes silicon and carbon.
- The third electrode faces the portion via a first insulating film.
- Potential Applications
The technology described in this patent application could be used in the development of advanced semiconductor devices for various electronic applications, such as high-speed computing, telecommunications, and sensor technologies.
- Problems Solved
This technology addresses the need for improved semiconductor devices with enhanced performance, efficiency, and reliability by utilizing specific semiconductor layer configurations and electrode connections.
- Benefits
The benefits of this technology include increased functionality, higher performance, and potentially lower power consumption in semiconductor devices compared to traditional designs.
- Potential Commercial Applications
The semiconductor device innovation outlined in this patent application could have commercial applications in industries such as consumer electronics, automotive electronics, aerospace, and medical devices.
- Possible Prior Art
One possible prior art in this field could be the development of similar semiconductor devices with multiple layers and electrode configurations, but without the specific features and materials described in this patent application.
- Unanswered Questions
- How does this semiconductor device compare to existing technologies in terms of performance and efficiency?
This article does not provide a direct comparison between this semiconductor device and existing technologies in the field. Further research and testing would be needed to evaluate its performance and efficiency against current solutions.
- What are the potential challenges or limitations in implementing this semiconductor device on a larger scale for commercial production?
The article does not address the potential challenges or limitations in scaling up the production of this semiconductor device for commercial applications. Factors such as manufacturing costs, scalability, and compatibility with existing technologies would need to be considered.
Original Abstract Submitted
A semiconductor device includes a first electrode, a first semiconductor layer connected to the first electrode, a second semiconductor layer located on a portion of the first semiconductor layer, a third semiconductor layer located on a portion of the second semiconductor layer, a second electrode connected to the third semiconductor layer, and a third electrode located in a region directly above at least a portion of the second semiconductor layer between the first semiconductor layer and the third semiconductor layer. The third semiconductor layer faces the first semiconductor layer via the second semiconductor layer. A side surface of the third semiconductor layer facing the first semiconductor layer has a shape that approaches the first semiconductor layer upward. The third semiconductor layer is of a first conductivity type and includes silicon and carbon. The third electrode faces the portion via a first insulating film.
