18165692. SEMICONDUCTOR MEMORY DEVICE simplified abstract (Samsung Electronics Co., Ltd.)
Contents
SEMICONDUCTOR MEMORY DEVICE
Organization Name
Inventor(s)
Hui-Jung Kim of Seongnam-si (KR)
Kiseok Lee of Hwaseong-si (KR)
Yoosang Hwang of Yongin-si (KR)
SEMICONDUCTOR MEMORY DEVICE - A simplified explanation of the abstract
This abstract first appeared for US patent application 18165692 titled 'SEMICONDUCTOR MEMORY DEVICE
Simplified Explanation
The patent application describes a semiconductor memory device that includes a stack of layers vertically stacked on a substrate. Each layer has a bit line and a semiconductor pattern, with gate electrodes stacked along the patterns. The device also includes a vertical insulating layer, a stopper layer, and a data storing element connected to the semiconductor patterns. The data storing element consists of a first electrode, a second electrode, and a dielectric layer between them. The stopper layer is positioned between the vertical insulating layer and the second electrode.
- The semiconductor memory device has a stack of layers with vertically stacked components.
- Each layer has a bit line and a semiconductor pattern, with gate electrodes stacked along the patterns.
- The device includes a vertical insulating layer, a stopper layer, and a data storing element.
- The data storing element consists of a first electrode, a second electrode, and a dielectric layer between them.
- The stopper layer is positioned between the vertical insulating layer and the second electrode.
Potential Applications
- This semiconductor memory device can be used in various electronic devices that require high-density memory storage.
- It can be applied in smartphones, tablets, computers, and other portable devices where compact memory is crucial.
Problems Solved
- The device solves the problem of limited memory capacity in electronic devices by providing a high-density memory storage solution.
- It addresses the challenge of stacking multiple components vertically to maximize memory capacity while maintaining functionality.
Benefits
- The semiconductor memory device offers increased memory capacity due to its vertical stacking design.
- It provides a compact and efficient memory storage solution for electronic devices.
- The device allows for improved performance and faster data access in electronic devices.
Original Abstract Submitted
A semiconductor memory device includes a stack including a plurality of layers vertically stacked on a substrate, each of the layers including a bit line extending in a first direction and a semiconductor pattern extending from the bit line in a second direction crossing the first direction, a gate electrode along each of the semiconductor patterns stacked, a vertical insulating layer on the gate electrode, a stopper layer, and a data storing element electrically connected to each of the semiconductor patterns. The data storing element includes a first electrode electrically connected to each of the semiconductor patterns, a second electrode on the first electrode, and a dielectric layer between the first and second electrodes. The stopper layer is between the vertical insulating layer and the second electrode.
