18158452. CAPACITOR AND METHOD FOR FORMING THE SAME simplified abstract (TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.)

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CAPACITOR AND METHOD FOR FORMING THE SAME

Organization Name

TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.

Inventor(s)

Meng-Han Lin of Hsinchu City (TW)

Meng-Sheng Chang of Hsinchu County (TW)

CAPACITOR AND METHOD FOR FORMING THE SAME - A simplified explanation of the abstract

This abstract first appeared for US patent application 18158452 titled 'CAPACITOR AND METHOD FOR FORMING THE SAME

Simplified Explanation

The abstract describes an integrated circuit structure that includes a semiconductor substrate, a shallow trench isolation (STI) region, and a capacitor. The STI region is embedded in the semiconductor substrate. The capacitor consists of first and second conductive stacks. The first conductive stack includes a first dummy gate strip located entirely within the STI region and multiple first metal dummy gate contacts landing on the first metal capacitor strip. The second conductive stack includes a second dummy gate strip also located entirely within the STI region and running parallel to the first dummy gate strip. It also includes multiple second dummy gate contacts landing on the second dummy gate strip. Importantly, the first conductive stack is electrically isolated from the second conductive stack.

  • Integrated circuit structure with a semiconductor substrate, STI region, and a capacitor.
  • STI region embedded in the semiconductor substrate.
  • Capacitor consists of first and second conductive stacks.
  • First conductive stack includes a first dummy gate strip within the STI region and multiple first metal dummy gate contacts landing on the first metal capacitor strip.
  • Second conductive stack includes a second dummy gate strip within the STI region, running parallel to the first dummy gate strip, and multiple second dummy gate contacts landing on the second dummy gate strip.
  • First conductive stack is electrically isolated from the second conductive stack.

Potential Applications

  • This integrated circuit structure can be used in various electronic devices, such as smartphones, computers, and IoT devices.
  • It can be applied in the manufacturing of advanced microprocessors, memory chips, and other integrated circuits.

Problems Solved

  • The integrated circuit structure provides improved isolation between the first and second conductive stacks, reducing the risk of interference and cross-talk.
  • The structure helps to optimize the performance and reliability of the integrated circuit by preventing unwanted electrical coupling between different components.

Benefits

  • Enhanced performance and reliability of integrated circuits.
  • Improved isolation between conductive stacks, reducing interference and cross-talk.
  • Enables the manufacturing of more advanced and efficient electronic devices.


Original Abstract Submitted

An integrated circuit (IC) structure includes a semiconductor substrate, a shallow trench isolation (STI) region, and a capacitor. The STI region is embedded in the semiconductor substrate. The capacitor includes first and second conductive stacks. The first conductive stack includes a first dummy gate strip disposed entirely within the STI region and a plurality of first metal dummy gate contacts landing on the first metal capacitor strip. The second conductive stack includes a second dummy gate strip disposed entirely within the STI region and extending in parallel with the first dummy gate strip, and a plurality of second dummy gate contacts landing on the second dummy gate strip, wherein the first conductive stack is electrically isolated from the second conductive stack.

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