18158137. HYBRID CUT METAL GATE TO ACHIEVE MINIMUM CELL PITCHES, REDUCING ROUTING AND RISING THE YIELD simplified abstract (Taiwan Semiconductor Manufacturing Company, Ltd.)
Contents
HYBRID CUT METAL GATE TO ACHIEVE MINIMUM CELL PITCHES, REDUCING ROUTING AND RISING THE YIELD
Organization Name
Taiwan Semiconductor Manufacturing Company, Ltd.
Inventor(s)
Chin-Liang Chen of Hsinchu (TW)
Ching-Wei Tsai of Hsinchu (TW)
Chun-Yuan Chen of Hsinchu (TW)
HYBRID CUT METAL GATE TO ACHIEVE MINIMUM CELL PITCHES, REDUCING ROUTING AND RISING THE YIELD - A simplified explanation of the abstract
This abstract first appeared for US patent application 18158137 titled 'HYBRID CUT METAL GATE TO ACHIEVE MINIMUM CELL PITCHES, REDUCING ROUTING AND RISING THE YIELD
Simplified Explanation
The semiconductor device described in the patent application includes a unique gate structure configuration with specific dimensions and positioning to optimize performance.
- The device features a first gate structure with a first end cap portion and a second gate structure with a second end cap portion aligned with the first gate structure.
- A first dielectric region separates the end cap portions, ensuring proper insulation between them.
- A first conductive element extends over the first gate structure, while a second conductive element extends over the second gate structure.
- A gate via connects the second gate structure and the second conductive element, enhancing electrical connectivity within the device.
- The first dielectric region is strategically positioned under the first conductive element, defining a spacing between the gate via and the end of the second end cap portion that exceeds a predetermined distance.
Potential Applications
- High-performance semiconductor devices
- Advanced integrated circuits
- Power electronics
Problems Solved
- Improved electrical connectivity
- Enhanced insulation between components
- Optimal gate structure design for semiconductor devices
Benefits
- Increased device efficiency
- Enhanced performance capabilities
- Greater reliability and longevity
Original Abstract Submitted
Provided are semiconductor devices that include a first gate structure having a first end cap portion, a second gate structure having a second end cap portion coaxial with the first gate structure, a first dielectric region separating the first end cap portion and the second end cap portion, a first conductive element extending over the first gate structure, a second conductive element extending over the second gate structure, and a gate via electrically connecting the second gate structure and the second conductive element, with the first dielectric region having a first width and being positioned at least partially under the first conductive element and defines a spacing between the gate via and an end of the second end cap portion that exceeds a predetermined distance.
