18158108. MEMORY DEVICE SENSE AMPLIFIER CONTROL simplified abstract (Taiwan Semiconductor Manufacturing Co., Ltd.)

MEMORY DEVICE SENSE AMPLIFIER CONTROL

Organization Name

Taiwan Semiconductor Manufacturing Co., Ltd.

Inventor(s)

Chien-Yuan Chen of Hsinchu City (TW)

Hau-Tai Shieh of Hsinchu City (TW)

Cheng Hung Lee of Hsinchu (TW)

MEMORY DEVICE SENSE AMPLIFIER CONTROL - A simplified explanation of the abstract

This abstract first appeared for US patent application 18158108 titled 'MEMORY DEVICE SENSE AMPLIFIER CONTROL

Simplified Explanation

The memory device described in the abstract includes various latches and clock signals to enable the reading and writing of data in memory cells. Here is a simplified explanation of the patent application:

• Memory bank with memory cells, local bit lines, and word lines
• First local data latch connected to local bit line with a first local clock signal
• Word line latch latches word line select signal with a second local clock signal
• First global data latch connected to first local data latch via global bit line with a global clock signal
• Global address latch connected to word line latch with a global clock signal
• Bank select latch latches bank select signal with a second local clock signal

1. 1. 1. Potential Applications

- High-speed memory devices - Data storage systems - Computer memory modules

1. 1. 1. Problems Solved

- Efficient data reading and writing in memory banks - Synchronization of clock signals for accurate data retrieval - Improved memory access speed

1. 1. 1. Benefits

- Faster data processing - Enhanced memory performance - Reduced power consumption

1. 1. 1. Potential Commercial Applications
         1. Optimizing Memory Access in High-Speed Computing Systems

1. 1. 1. Possible Prior Art

There are existing memory devices with similar latch and clock signal configurations, but the specific combination described in this patent application may be novel.

1. 1. 1. 1. Unanswered Questions
         2. How does this memory device compare to existing memory technologies in terms of speed and efficiency?

This article does not provide a direct comparison with existing memory technologies, so it is unclear how this innovation stacks up against current solutions.

1. 1. 1. 1. What impact could this memory device have on the development of future computing systems?

The potential long-term implications of integrating this memory device into future computing systems are not discussed in this article.

Original Abstract Submitted

A memory device includes a memory bank with a memory cell connected to a local bit line and a word line. A first local data latch is connected to the local bit line and has an enable terminal configured to receive a first local clock signal. A word line latch is configured to latch a word line select signal, and has an enable terminal configured to receive a second local clock signal. A first global data latch is connected to the first local data latch by a global bit line, and the first global data latch has an enable terminal configured to receive a global clock signal. A global address latch is connected to the word line latch and has an enable terminal configured to receive the global clock signal. A bank select latch is configured to latch a bank select signal, and has an enable terminal configured to receive the second local clock signal.