18157591. SEMICONDUCTOR DEVICE AND METHOD FOR FABRICATING THE SAME simplified abstract (SAMSUNG ELECTRONICS CO., LTD.)
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SEMICONDUCTOR DEVICE AND METHOD FOR FABRICATING THE SAME
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SEMICONDUCTOR DEVICE AND METHOD FOR FABRICATING THE SAME - A simplified explanation of the abstract
This abstract first appeared for US patent application 18157591 titled 'SEMICONDUCTOR DEVICE AND METHOD FOR FABRICATING THE SAME
Simplified Explanation
The patent application describes a semiconductor device that improves its performance by using a cut region where a gate cut is implemented. The device includes active patterns and gate electrodes that are arranged in a specific configuration.
- The semiconductor device has a first, second, third, and fourth active pattern that extend parallel to each other in one direction and are arranged along another direction.
- A first gate electrode is extended in the second direction on the first to fourth active patterns.
- There is a first cut region between the first and second active patterns and a second cut region between the third and fourth active patterns, both extending in the first direction to cut the first gate electrode.
- The first cut region has different dimensional features compared to the second cut region.
Potential applications of this technology:
- Semiconductor manufacturing industry
- Electronics industry
- Mobile devices
- Computer processors
Problems solved by this technology:
- Enhances the operation performance of the semiconductor device
- Improves the efficiency and functionality of the device
- Provides a more precise and controlled gate cut implementation
Benefits of this technology:
- Enhanced performance of the semiconductor device
- Improved efficiency and functionality
- Precise and controlled gate cut implementation
Original Abstract Submitted
There is provided a semiconductor device having enhanced operation performance by utilizing a cut region where a gate cut is implemented. There is provided a semiconductor device comprising a first active pattern, a second active pattern, a third active pattern, and a fourth active pattern, all of which extend in parallel in a first direction, and are arranged along a second direction intersecting the first direction; a first gate electrode extended in the second direction on the first to fourth active patterns a first cut region extended in the first direction between the first active pattern and the second active pattern to cut the first gate electrode and a second cut region extended in the first direction between the third active pattern and the fourth active pattern to cut the first gate electrode, wherein one or more first dimensional features related to the first cut region is different from one or more second dimensional features related to the second cut region.
