18157418. MEMORY DEVICES AND METHODS OF MANUFACTURING THEREOF simplified abstract (Taiwan Semiconductor Manufacturing Co., Ltd.)

MEMORY DEVICES AND METHODS OF MANUFACTURING THEREOF

Organization Name

Taiwan Semiconductor Manufacturing Co., Ltd.

Inventor(s)

Meng-Sheng Chang of Chu-bei City (TW)

Chia-En Huang of Xinfeng Township (TW)

Yi-Hsun Chiu of Zhubei City (TW)

Yih Wang of Hsinchu City (TW)

MEMORY DEVICES AND METHODS OF MANUFACTURING THEREOF - A simplified explanation of the abstract

This abstract first appeared for US patent application 18157418 titled 'MEMORY DEVICES AND METHODS OF MANUFACTURING THEREOF

Simplified Explanation

The patent application describes a memory device that consists of two transistors, each containing semiconductor nanostructures. These nanostructures are arranged in a spaced-apart manner along a specific direction and have different widths along a perpendicular direction.

• The memory device includes a first transistor with one or more semiconductor nanostructures.
• The first transistor's nanostructures are spaced apart from each other along a specific direction.
• Each nanostructure in the first transistor has a specific width along a perpendicular direction.
• The memory device also includes a second transistor connected to the first transistor in series.
• The second transistor contains one or more semiconductor nanostructures.
• The nanostructures in the second transistor are also spaced apart along the same direction as the first transistor.
• However, the nanostructures in the second transistor have a different width along the perpendicular direction compared to the first transistor.

Potential applications of this technology:

• Memory devices in electronic devices such as computers, smartphones, and tablets.
• High-density storage devices for data centers and cloud computing.
• Non-volatile memory for automotive electronics and IoT devices.

Problems solved by this technology:

• Enables the creation of memory devices with improved performance and storage capacity.
• Allows for more efficient use of space within electronic devices.
• Provides a solution for increasing the density of memory storage.

Benefits of this technology:

• Higher storage capacity in memory devices.
• Improved performance and speed of data retrieval.
• Reduction in the physical size of memory devices.
• Enhanced energy efficiency in electronic devices.

Original Abstract Submitted

A memory device includes a first transistor. The first transistor includes one or more first semiconductor nanostructures spaced apart from one another along a first direction. Each of the one or more first semiconductor nanostructures has a first width along a second direction perpendicular to the first direction. The memory device also includes a second transistor coupled to the first transistor in series. The second transistor includes one or more second semiconductor nanostructures spaced apart from one another along the first direction. Each of the one or more second semiconductor nanostructures has a second, different width along the second direction.