18156893. NON-VOLATILE MEMORY DEVICE, CONTROLLER FOR CONTROLLING THE SAME, STORAGE DEVICE HAVING THE SAME, AND READING METHOD THEREOF simplified abstract (SAMSUNG ELECTRONICS CO., LTD.)
Contents
- 1 NON-VOLATILE MEMORY DEVICE, CONTROLLER FOR CONTROLLING THE SAME, STORAGE DEVICE HAVING THE SAME, AND READING METHOD THEREOF
- 1.1 Organization Name
- 1.2 Inventor(s)
- 1.3 NON-VOLATILE MEMORY DEVICE, CONTROLLER FOR CONTROLLING THE SAME, STORAGE DEVICE HAVING THE SAME, AND READING METHOD THEREOF - A simplified explanation of the abstract
- 1.4 Simplified Explanation
- 1.5 Potential Applications
- 1.6 Problems Solved
- 1.7 Benefits
- 1.8 Original Abstract Submitted
NON-VOLATILE MEMORY DEVICE, CONTROLLER FOR CONTROLLING THE SAME, STORAGE DEVICE HAVING THE SAME, AND READING METHOD THEREOF
Organization Name
Inventor(s)
NON-VOLATILE MEMORY DEVICE, CONTROLLER FOR CONTROLLING THE SAME, STORAGE DEVICE HAVING THE SAME, AND READING METHOD THEREOF - A simplified explanation of the abstract
This abstract first appeared for US patent application 18156893 titled 'NON-VOLATILE MEMORY DEVICE, CONTROLLER FOR CONTROLLING THE SAME, STORAGE DEVICE HAVING THE SAME, AND READING METHOD THEREOF
Simplified Explanation
The abstract describes a controller for non-volatile memory devices that includes an error correction circuit and a non-volatile memory interface circuit. The non-volatile memory interface circuit receives side information from the memory device, predicts a distribution of memory cells based on this information, and selects an error correction decoding level accordingly.
- The controller includes a non-volatile memory interface circuit connected to non-volatile memory devices.
- An error correction circuit performs error correction on received codewords.
- The error correction decoding level is selected based on predicted distribution of memory cells.
- The non-volatile memory interface circuit receives side information from the memory devices.
- The predicted distribution of memory cells helps in selecting the appropriate error correction decoding level.
Potential Applications
- This technology can be applied in various storage devices such as solid-state drives (SSDs) and flash memory cards.
- It can be used in data centers and servers to enhance the reliability and performance of storage systems.
Problems Solved
- Non-volatile memory devices can experience errors during data storage and retrieval.
- Predicting the distribution of memory cells helps in selecting the most effective error correction decoding level.
- This technology addresses the challenge of optimizing error correction for different memory cell distributions.
Benefits
- Improved error correction capabilities enhance the reliability and integrity of stored data.
- Selecting the appropriate error correction decoding level based on predicted memory cell distribution improves overall performance.
- The technology enables efficient utilization of non-volatile memory devices by adapting error correction to specific conditions.
Original Abstract Submitted
A controller including a non-volatile memory interface circuit connected to at least one non-volatile memory device and configured to control the at least one non-volatile memory device; an error correction circuit configured to perform an error correction operation on a codeword received from the non-volatile memory interface circuit according to an error correction decoding level from among a plurality of error correction decoding levels, wherein the non-volatile memory interface circuit is further configured to: receive side information from the at least one non-volatile memory device; predict a distribution of memory cells based on the side information; and select the error correction decoding level from among the plurality of error correction decoding levels according to the predicted distribution.
