18156693. METHOD OF FORMING AN IMAGE SENSOR HAVING STRESS RELEASING STRUCTURE simplified abstract (TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.)
METHOD OF FORMING AN IMAGE SENSOR HAVING STRESS RELEASING STRUCTURE
Organization Name
TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.
Inventor(s)
METHOD OF FORMING AN IMAGE SENSOR HAVING STRESS RELEASING STRUCTURE - A simplified explanation of the abstract
This abstract first appeared for US patent application 18156693 titled 'METHOD OF FORMING AN IMAGE SENSOR HAVING STRESS RELEASING STRUCTURE
Simplified Explanation
The patent application describes a method of making a semiconductor structure, specifically a pixel array region on a substrate. The method involves forming a first seal ring region around the pixel array region, which includes a first seal ring. Additionally, a first isolation feature is formed within the first seal ring region by filling a first opening with a dielectric material. This first isolation feature acts as a continuous structure surrounding the pixel array region. Furthermore, a second isolation feature is formed between the first isolation feature and the pixel array region by filling a second opening with the same dielectric material.
- The method involves forming a pixel array region on a substrate.
- A first seal ring region is formed around the pixel array region, including a first seal ring.
- A first isolation feature is created within the first seal ring region by filling a first opening with a dielectric material.
- The first isolation feature acts as a continuous structure surrounding the pixel array region.
- A second isolation feature is formed between the first isolation feature and the pixel array region by filling a second opening with the same dielectric material.
Potential Applications
- Semiconductor manufacturing
- Display technologies
- Integrated circuits
Problems Solved
- Provides a method for creating a continuous isolation structure around a pixel array region.
- Helps in preventing interference or cross-talk between different regions of the semiconductor structure.
Benefits
- Improved performance and reliability of semiconductor devices.
- Enhanced isolation and protection of the pixel array region.
- Enables better control over the manufacturing process.
Original Abstract Submitted
A method of making a semiconductor structure includes forming a pixel array region on a substrate. The method further includes forming a first seal ring region on the substrate, wherein the first seal ring region surrounds the pixel array region, and the first seal ring region includes a first seal ring. The method further includes forming a first isolation feature in the first seal ring region, wherein forming the first isolation feature includes filling a first opening with a dielectric material, wherein the first isolation feature is a continuous structure surrounding the pixel array region. The method further includes forming a second isolation feature between the first isolation feature and the pixel array region, wherein forming the second isolation feature includes filling a second opening with the dielectric material.
