18156625. ANTI-FUSE DEVICE AND METHOD simplified abstract (Taiwan Semiconductor Manufacturing Co., Ltd.)
Contents
ANTI-FUSE DEVICE AND METHOD
Organization Name
Taiwan Semiconductor Manufacturing Co., Ltd.
Inventor(s)
Meng-Sheng Chang of Hsinchu (TW)
ANTI-FUSE DEVICE AND METHOD - A simplified explanation of the abstract
This abstract first appeared for US patent application 18156625 titled 'ANTI-FUSE DEVICE AND METHOD
Simplified Explanation
The patent application describes an integrated circuit (IC) device that includes various components and structures for electrical connection and functionality.
- The IC device has an active area located in a substrate.
- There are first and second contact structures that are positioned above the active area and are electrically connected to it.
- A conductive element is present above and connected to both the first and second contact structures.
- An anti-fuse transistor device is included, which consists of a dielectric layer positioned between a gate structure and the active area.
- Additionally, there is a first selection transistor located adjacent to both the anti-fuse transistor device and the first contact structure.
- Similarly, a second selection transistor is present adjacent to both the anti-fuse transistor device and the second contact structure.
Potential applications of this technology:
- Integrated circuits for various electronic devices such as smartphones, computers, and IoT devices.
- Memory devices, such as non-volatile memory or programmable logic devices.
Problems solved by this technology:
- Provides a compact and efficient design for an IC device.
- Enables effective electrical connection and functionality between different components of the IC device.
- Facilitates the integration of anti-fuse transistor devices and selection transistors in a single IC device.
Benefits of this technology:
- Improved performance and functionality of integrated circuits.
- Enhanced reliability and durability of the IC device.
- Enables miniaturization and cost reduction in the manufacturing process of IC devices.
Original Abstract Submitted
An IC device includes an active area positioned in a substrate, first and second contact structures overlying and electrically connected to the active area, a conductive element overlying and electrically connected to each of the first and second contact structures, an anti-fuse transistor device including a dielectric layer between a gate structure and the active area, a first selection transistor overlying the active area adjacent to each of the anti-fuse transistor device and the first contact structure, and a second selection transistor overlying the active area adjacent to each of the anti-fuse transistor device and the second contact structure.
