18156049. SEMICONDUCTOR DEVICE INCLUDING TWO-DIMENSIONAL MATERIAL AND METHOD OF MANUFACTURING THE SAME simplified abstract (SAMSUNG ELECTRONICS CO., LTD.)

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SEMICONDUCTOR DEVICE INCLUDING TWO-DIMENSIONAL MATERIAL AND METHOD OF MANUFACTURING THE SAME

Organization Name

SAMSUNG ELECTRONICS CO., LTD.

Inventor(s)

Minsu Seol of Suwon-si (KR)

Keunwook Shin of Suwon-si (KR)

Alum Jung of Suwon-si (KR)

Junyoung Kwon of Suwon-si (KR)

Kyung-Eun Byun of Suwon-si (KR)

Minseok Yoo of Suwon-si (KR)

SEMICONDUCTOR DEVICE INCLUDING TWO-DIMENSIONAL MATERIAL AND METHOD OF MANUFACTURING THE SAME - A simplified explanation of the abstract

This abstract first appeared for US patent application 18156049 titled 'SEMICONDUCTOR DEVICE INCLUDING TWO-DIMENSIONAL MATERIAL AND METHOD OF MANUFACTURING THE SAME

Simplified Explanation

The abstract describes a semiconductor device that includes a two-dimensional (2D) material layer, source and drain electrodes, a gate insulating layer, a gate electrode, and graphene layers. The 2D material layer consists of a polycrystalline structure and includes a sheet member and a protrusion. The graphene layer covers a part of the sheet member and the protrusion.

  • The semiconductor device includes a 2D material layer, which is a thin layer of material with unique properties.
  • The source and drain electrodes are positioned on the 2D material layer, allowing for the flow of current.
  • A gate insulating layer and gate electrode are placed between the source and drain electrodes, controlling the flow of current.
  • Graphene layers are present on both sides of the gate insulating layer, providing additional functionality and protection.
  • The 2D material layer consists of a polycrystalline structure, which enhances its performance.
  • The sheet member of the 2D material layer extends along one plane, while the protrusion extends in a perpendicular direction.
  • The graphene layer covers a portion of the sheet member and the protrusion, offering additional support and functionality.

Potential Applications:

  • This semiconductor device can be used in electronic devices such as transistors and integrated circuits.
  • It can be utilized in various industries, including telecommunications, computing, and consumer electronics.

Problems Solved:

  • The device addresses the need for efficient and reliable semiconductor devices.
  • It solves the challenge of controlling current flow in a semiconductor device.

Benefits:

  • The 2D material layer and graphene layers enhance the performance and functionality of the device.
  • The polycrystalline structure of the 2D material layer improves its electrical properties.
  • The presence of the gate insulating layer and gate electrode allows for precise control of current flow.
  • The use of graphene layers provides additional protection and support to the device.


Original Abstract Submitted

A semiconductor device may include a two-dimensional (2D) material layer, a source electrode and a drain electrode spaced apart from each other on the 2D material layer, a gate insulating layer and a gate electrode on the 2D material layer between the source electrode and the drain electrode, and graphene layers on both sides of the gate insulating layer. The 2D material layer may include a 2D semiconductor material having a polycrystalline structure. The 2D material layer may include a sheet member and a protrusion. The sheet member may extend along one plane. The protrusion may extend in one direction perpendicular to the one plane. The graphene layer may cover a part of the sheet member and the protrusion.

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