18155926. STRUCTURES WITH CONVEX CAVITY BOTTOMS simplified abstract (Taiwan Semiconductor Manufacturing Co., Ltd.)
Contents
- 1 STRUCTURES WITH CONVEX CAVITY BOTTOMS
- 1.1 Organization Name
- 1.2 Inventor(s)
- 1.3 STRUCTURES WITH CONVEX CAVITY BOTTOMS - A simplified explanation of the abstract
- 1.4 Simplified Explanation
- 1.5 Potential Applications
- 1.6 Problems Solved
- 1.7 Benefits
- 1.8 Potential Commercial Applications
- 1.9 Possible Prior Art
- 1.10 Original Abstract Submitted
STRUCTURES WITH CONVEX CAVITY BOTTOMS
Organization Name
Taiwan Semiconductor Manufacturing Co., Ltd.
Inventor(s)
Wei Hsiang Chan of Hsinchu (TW)
STRUCTURES WITH CONVEX CAVITY BOTTOMS - A simplified explanation of the abstract
This abstract first appeared for US patent application 18155926 titled 'STRUCTURES WITH CONVEX CAVITY BOTTOMS
Simplified Explanation
The abstract describes a method for fabricating conductive structures within dielectric material, involving depositing layers, etching cavities, and filling them with conductive material to form structures electrically connected to existing features.
- Substrate with conductive feature in first dielectric layer
- Deposition of second dielectric layer over feature
- Etching of second dielectric layer to form cavity with convex bottom profile
- Deposition of barrier layer at bottom of cavity
- Filling cavity with conductive material to form structure connected to feature
Potential Applications
The technology described in this patent application could be applied in the manufacturing of electronic devices, sensors, and integrated circuits where precise control and placement of conductive structures within dielectric material is required.
Problems Solved
This technology solves the problem of integrating conductive structures within dielectric material without causing interference or short circuits, allowing for more compact and efficient electronic devices to be produced.
Benefits
The benefits of this technology include improved reliability and performance of electronic devices, increased design flexibility, and potentially lower manufacturing costs due to the precise and controlled fabrication process.
Potential Commercial Applications
The potential commercial applications of this technology include the production of advanced microelectronics, sensors for various industries, and high-density integrated circuits for consumer electronics.
Possible Prior Art
One possible prior art for this technology could be the use of similar fabrication methods in the semiconductor industry for creating complex structures within dielectric materials.
Unanswered Questions
How does this technology compare to traditional methods of fabricating conductive structures within dielectric material?
This article does not directly compare the described technology to traditional methods, leaving the reader to infer the potential advantages or disadvantages of this new approach.
What are the specific industries or sectors that could benefit the most from this technology?
While the potential applications are mentioned, the article does not delve into specific industries or sectors that could see the greatest impact from the implementation of this technology.
Original Abstract Submitted
Provided are conductive structures located within dielectric material, and methods for fabricating such structures and devices. An exemplary method includes providing a substrate having a conductive feature in a first dielectric layer; depositing a second dielectric layer over the conductive feature and the first dielectric layer; etching the second dielectric layer to form a cavity through the second dielectric layer, wherein the cavity has a bottom with a convex profile; depositing a barrier layer along the bottom of the cavity; and depositing a conductive material in the cavity to form a structure electrically connected to the conductive feature.
