18155925. MEMORY CIRCUIT AND METHOD OF OPERATING SAME simplified abstract (Taiwan Semiconductor Manufacturing Co., Ltd.)
Contents
MEMORY CIRCUIT AND METHOD OF OPERATING SAME
Organization Name
Taiwan Semiconductor Manufacturing Co., Ltd.
Inventor(s)
Chun-Hao Chang of Hsinchu (TW)
MEMORY CIRCUIT AND METHOD OF OPERATING SAME - A simplified explanation of the abstract
This abstract first appeared for US patent application 18155925 titled 'MEMORY CIRCUIT AND METHOD OF OPERATING SAME
Simplified Explanation
The patent application describes a memory circuit that includes a sense amplifier and a detection circuit. The sense amplifier has a comparator that receives voltages from a non-volatile memory cell and outputs a signal. The detection circuit latches the output signal and disrupts the current path between the memory cell and the sense amplifier using a first inverter.
- The memory circuit includes a sense amplifier and a detection circuit.
- The sense amplifier has a comparator with input terminals for receiving voltages from a non-volatile memory cell.
- The comparator outputs a signal based on the received voltages.
- The detection circuit latches the output signal and disrupts the current path between the memory cell and the sense amplifier.
- The detection circuit includes a first inverter that generates an inverted version of the output signal.
Potential applications of this technology:
- Non-volatile memory systems
- Data storage devices
- Solid-state drives (SSDs)
- Flash memory
Problems solved by this technology:
- Ensures accurate sensing and detection of memory cell voltages
- Prevents current leakage between memory cells and sense amplifiers
- Improves overall reliability and performance of memory circuits
Benefits of this technology:
- Enhanced memory cell sensing capabilities
- Increased data integrity and reliability
- Improved efficiency and performance of memory circuits
- Reduced power consumption and current leakage.
Original Abstract Submitted
A memory circuit includes a sense amplifier coupled to a non-volatile memory cell, and a detection circuit coupled to the sense amplifier and the non-volatile memory cell. The sense amplifier includes a comparator. The comparator includes a first input terminal coupled to the non-volatile memory cell by a first node, and configured to receive a first voltage, a second input terminal configured to receive a second voltage, and a first output terminal configured to output a first output signal. The detection circuit is configured to latch the first output signal and disrupt a current path between the non-volatile memory cell and the sense amplifier. The detection circuit includes a first inverter. A first input terminal of the first inverter is configured to receive the first output signal. A first output terminal of the first inverter is configured to generate an inverted first output signal.
