18155785. IMAGE SENSORS simplified abstract (SAMSUNG ELECTRONICS CO., LTD.)
Contents
IMAGE SENSORS
Organization Name
Inventor(s)
Jung Bin Yun of Hwaseong-si (KR)
Eun Sub Shim of Hwaseong-si (KR)
Jung Hoon Park of Hwaseong-si (KR)
Jung Wook Lim of Gunpo-si (KR)
IMAGE SENSORS - A simplified explanation of the abstract
This abstract first appeared for US patent application 18155785 titled 'IMAGE SENSORS
Simplified Explanation
The patent application describes image sensors that have multiple photoelectric conversion elements and microlenses. These image sensors also include pixel transistors that perform different functions and are located in different pixel regions.
- The image sensors have a substrate with different regions for photoelectric conversion elements and pixel transistors.
- Each region of the substrate contains a specific photoelectric conversion element and pixel transistor.
- Microlenses are placed over the photoelectric conversion elements to enhance their light-gathering capabilities.
- The image sensors also include a floating diffusion region and multiple pixel transistors that serve different purposes.
- The pixel transistors are located in different pixel regions and perform various functions.
Potential Applications
- Digital cameras
- Smartphone cameras
- Surveillance cameras
- Medical imaging devices
Problems Solved
- Enhanced light-gathering capabilities with the use of microlenses
- Different pixel transistors performing different functions for improved image processing
- Efficient use of substrate space by placing multiple photoelectric conversion elements and pixel transistors in different regions
Benefits
- Improved image quality and sensitivity
- Enhanced image processing capabilities
- Compact design with efficient use of space on the substrate
Original Abstract Submitted
Image sensors are provided. The image sensors may include a substrate including first, second, third and fourth regions, a first photoelectric conversion element in the first region, a second photoelectric conversion element in the second region, a third photoelectric conversion element in the third region, a fourth photoelectric conversion element in the fourth region, a first microlens at least partially overlapping both the first and second photoelectric conversion elements, and a second microlens at least partially overlapping both the third and fourth photoelectric conversion elements. The image sensors may also include a floating diffusion region and first, second and third pixel transistors configured to perform different functions from each other. Each of the first, second and third pixel transistors may be disposed in at least one of first, second, third and fourth pixel regions. The first pixel transistor may include multiple first pixel transistors.
