18155681. QUANTUM WELL-BASED LED STRUCTURE ENHANCED WITH SIDEWALL HOLE INJECTION simplified abstract (GOOGLE LLC)
QUANTUM WELL-BASED LED STRUCTURE ENHANCED WITH SIDEWALL HOLE INJECTION
Organization Name
Inventor(s)
Benjamin Leung of Sunnyvale CA (US)
Miao-Chan Tsai of Sunnyvale CA (US)
Sheila Hurtt of Palo Alto CA (US)
Michael Joseph Cich of San Jose CA (US)
Aurelien Jean Francois David of San Francisco CA (US)
QUANTUM WELL-BASED LED STRUCTURE ENHANCED WITH SIDEWALL HOLE INJECTION - A simplified explanation of the abstract
This abstract first appeared for US patent application 18155681 titled 'QUANTUM WELL-BASED LED STRUCTURE ENHANCED WITH SIDEWALL HOLE INJECTION
Simplified Explanation
The abstract describes an LED structure that includes regrown p-type layers and a mesa structure formed on a substrate. The mesa structure consists of preparation layers, an active multiple quantum well (MQW) structure, a first electron blocking layer (EBL), and one or more first p-type layers stacked in a c-plane direction. The sidewalls of the mesa can be vertical or sloped. A second EBL is deposited over the mesa structure, followed by one or more second p-type layers. These regrown layers are referred to as the second EBL and second p-type layer(s).
- LED structure with regrown p-type layers and a mesa structure
- Mesa structure includes preparation layers, active MQW structure, first EBL, and first p-type layers
- Sidewalls of the mesa can be vertical or sloped
- Second EBL and second p-type layers are conformally deposited over the mesa structure
- Regrown layers referred to as second EBL and second p-type layer(s)
Potential Applications
- LED lighting
- Display technology
- Automotive lighting
- Signage and advertising
Problems Solved
- Improved LED structure with regrown layers
- Enhanced performance and efficiency of LEDs
- Better control of light emission and directionality
Benefits
- Higher brightness and efficiency of LEDs
- Improved color rendering and accuracy
- Greater design flexibility for LED applications
- Enhanced durability and lifespan of LED devices
Original Abstract Submitted
In a general aspect, an LED structure may include regrown p-type layers and have a mesa structure formed on a substrate. The mesa structure may include preparation layers, an active multiple quantum well (MQW) structure, a first electron blocking layer (EBL), and one or more first p-type layers stacked in a c-plane direction. The sidewalls of the mesa may be substantially vertical or may exhibit a sloped profile. A second EBL may be conformally deposited over the mesa structure, followed by one or more second p-type layers deposited over the conformal second EBL layer. The second EBL and/or second p-type layer(s) deposited over the mesa structure may be referred to herein as regrown layers.
