18155569. PASSIVE DEVICES IN BONDING LAYERS simplified abstract (Taiwan Semiconductor Manufacturing Company, Ltd.)

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PASSIVE DEVICES IN BONDING LAYERS

Organization Name

Taiwan Semiconductor Manufacturing Company, Ltd.

Inventor(s)

Yi Ching Ong of Hsinchu (TW)

Wei-Cheng Wu of Hsinchu County (TW)

Chien Hung Liu of Hsinchu County (TW)

Harry-Haklay Chuang of Zhubei City (TW)

Yu-Sheng Chen of Taoyuan City (TW)

Yu-Jen Wang of Hsinchu County (TW)

Kuo-Ching Huang of Hsinchu County (TW)

PASSIVE DEVICES IN BONDING LAYERS - A simplified explanation of the abstract

This abstract first appeared for US patent application 18155569 titled 'PASSIVE DEVICES IN BONDING LAYERS

Simplified Explanation

A semiconductor device described in the patent application consists of two dies with bonding layers containing metal coils embedded in dielectric layers. The first die has a bonding layer with a metal coil embedded in a dielectric layer, while the second die has a hybrid bonding layer with a metal coil embedded in a dielectric layer. These two bonding layers are bonded together, connecting the metal coils and dielectric layers of the two dies.

  • First die includes a bonding layer with a metal coil embedded in a dielectric layer.
  • Second die includes a hybrid bonding layer with a metal coil embedded in a dielectric layer.
  • The two bonding layers are bonded together, connecting the metal coils and dielectric layers of the two dies.

Potential Applications

  • Semiconductor manufacturing
  • Electronics industry
  • Integrated circuits

Problems Solved

  • Improved bonding between dies
  • Enhanced electrical connections
  • Increased device reliability

Benefits

  • Higher performance
  • Better durability
  • Enhanced functionality


Original Abstract Submitted

A semiconductor device according to embodiments of the present disclosure includes a first die including a first bonding layer and a second die including a second hybrid bonding layer. The first bonding layer includes a first dielectric layer and a first metal coil embedded in the first dielectric layer. The second bonding layer includes a second dielectric layer and a second metal coil embedded in the second dielectric layer. The second hybrid bonding layer is bonded to the first hybrid bonding layer such that the first dielectric layer is bonded to the second dielectric layer and the first metal coil is bonded to the second metal coil.