18154540. SEMICONDUCTOR DEVICE STRUCTURE WITH PROTECTION CAP simplified abstract (Taiwan Semiconductor Manufacturing Co., Ltd.)

SEMICONDUCTOR DEVICE STRUCTURE WITH PROTECTION CAP

Organization Name

Taiwan Semiconductor Manufacturing Co., Ltd.

Inventor(s)

Ting-Li Yang of Tainan City (TW)

Wei-Li Huang of Pingtung City (TW)

Sheng-Pin Yang of Kaohsiung City (TW)

Chi-Cheng Chen of Tainan City (TW)

Hon-Lin Huang of Hsinchu City (TW)

Chin-Yu Ku of Hsinchu City (TW)

Chen-Shien Chen of Zhubei City (TW)

SEMICONDUCTOR DEVICE STRUCTURE WITH PROTECTION CAP - A simplified explanation of the abstract

This abstract first appeared for US patent application 18154540 titled 'SEMICONDUCTOR DEVICE STRUCTURE WITH PROTECTION CAP

Simplified Explanation

The patent application describes a semiconductor device structure that includes a first conductive line over a substrate. The structure also includes a first protection cap made of a different conductive material, which covers the end portion of the first conductive line and exposes a peripheral region of its top surface. A first photosensitive dielectric layer is present over the substrate, the first conductive line, and the first protection cap. Additionally, a conductive via structure passes through the first photosensitive dielectric layer and is connected to the first protection cap.

• The semiconductor device structure includes a first conductive line and a first protection cap made of different conductive materials.
• The first protection cap covers the end portion of the first conductive line and exposes a peripheral region of its top surface.
• A first photosensitive dielectric layer is present over the substrate, the first conductive line, and the first protection cap.
• A conductive via structure passes through the first photosensitive dielectric layer and is connected to the first protection cap.

Potential Applications

• This semiconductor device structure can be used in various electronic devices, such as integrated circuits and microprocessors.
• It can be applied in the manufacturing of memory chips, logic circuits, and other semiconductor components.

Problems Solved

• The use of different conductive materials for the first conductive line and the first protection cap helps to improve the overall performance and reliability of the semiconductor device structure.
• The exposed peripheral region of the first conductive line's top surface allows for better connectivity and integration with other components.

Benefits

• The use of different conductive materials for the first conductive line and the first protection cap helps to reduce resistance and improve signal transmission.
• The exposed peripheral region of the first conductive line's top surface allows for easier connection to other components, enhancing the overall functionality of the semiconductor device structure.

Original Abstract Submitted

A semiconductor device structure is provided. The semiconductor device structure includes a first conductive line over a substrate. The semiconductor device structure includes a first protection cap over the end portion. The first protection cap and the first conductive line are made of different conductive materials, and the first protection cap exposes a peripheral region of a top surface of the end portion. The semiconductor device structure includes a first photosensitive dielectric layer over the substrate, the first conductive line, and the first protection cap. The semiconductor device structure includes a conductive via structure passing through the first photosensitive dielectric layer and connected to the first protection cap.