18154030. SEMICONDUCTOR DEVICE INCLUDING THIN FILM TRANSISTOR AND METHOD FOR FORMING THE SAME simplified abstract (TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY LTD.)
Contents
- 1 SEMICONDUCTOR DEVICE INCLUDING THIN FILM TRANSISTOR AND METHOD FOR FORMING THE SAME
- 1.1 Organization Name
- 1.2 Inventor(s)
- 1.3 SEMICONDUCTOR DEVICE INCLUDING THIN FILM TRANSISTOR AND METHOD FOR FORMING THE SAME - A simplified explanation of the abstract
- 1.4 Simplified Explanation
- 1.5 Potential Applications
- 1.6 Problems Solved
- 1.7 Benefits
- 1.8 Potential Commercial Applications
- 1.9 Possible Prior Art
- 1.10 Original Abstract Submitted
SEMICONDUCTOR DEVICE INCLUDING THIN FILM TRANSISTOR AND METHOD FOR FORMING THE SAME
Organization Name
TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY LTD.
Inventor(s)
YONG-JIE Wu of TAINAN CITY (TW)
HUI-HSIEN Wei of TAOYUAN CITY (TW)
SEMICONDUCTOR DEVICE INCLUDING THIN FILM TRANSISTOR AND METHOD FOR FORMING THE SAME - A simplified explanation of the abstract
This abstract first appeared for US patent application 18154030 titled 'SEMICONDUCTOR DEVICE INCLUDING THIN FILM TRANSISTOR AND METHOD FOR FORMING THE SAME
Simplified Explanation
The present disclosure describes a method for forming a semiconductor device, involving the creation of interconnect structures, gate structures, metal oxide layers, implant masks, and implantation operations.
- Forming an interconnect structure over a substrate
- Creating first and second gate structures in a first layer of the interconnect structure
- Depositing first and second metal oxide layers in a second layer of the interconnect structure over the gate structures
- Placing an implant mask with varying thicknesses over the metal oxide layers
- Conducting an implantation operation on the metal oxide layers
Potential Applications
This technology could be applied in the manufacturing of advanced semiconductor devices, such as microprocessors, memory chips, and integrated circuits.
Problems Solved
This method helps in improving the performance and efficiency of semiconductor devices by enhancing the integration of different components within the device.
Benefits
The method allows for precise control and customization of the semiconductor device's properties, leading to enhanced functionality and reliability.
Potential Commercial Applications
This technology could be utilized by semiconductor companies for developing cutting-edge products with improved performance and functionality.
Possible Prior Art
One possible prior art could be the use of implant masks in semiconductor device fabrication processes to control dopant distribution and device characteristics.
Unanswered Questions
How does this method compare to existing semiconductor fabrication techniques?
This method offers a more precise and controlled way of forming semiconductor devices compared to traditional methods, potentially leading to enhanced device performance and reliability.
What are the potential challenges in implementing this method on an industrial scale?
One challenge could be optimizing the process parameters for large-scale production while maintaining consistency and quality in the fabricated semiconductor devices.
Original Abstract Submitted
The present disclosure provides a method of forming a semiconductor device. The method includes: forming an interconnect structure over a substrate; forming a first gate structure and a second gate structure in a first layer of the interconnect structure; forming a first metal oxide layer and a second metal oxide layer in a second layer of the interconnect structure over the first gate structure and the second gate structure, respectively; forming an implant mask over the first metal oxide layer and the second metal oxide layer, the implant mask having different thicknesses corresponding to the first metal oxide layer and the second oxide layer; and performing an implantation operation on the first metal oxide layer and the second metal oxide layer.
