18153491. SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREOF simplified abstract (Taiwan Semiconductor Manufacturing Company, Ltd.)
SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREOF
Organization Name
Taiwan Semiconductor Manufacturing Company, Ltd.
Inventor(s)
Chia-Ling Chung of Hsinchu (TW)
Chun-Chih Cheng of Changhua (TW)
Ying-Liang Chuang of Hsinchu (TW)
SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREOF - A simplified explanation of the abstract
This abstract first appeared for US patent application 18153491 titled 'SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREOF
Simplified Explanation
The abstract describes a semiconductor device and a method for fabricating it. The device includes a gate structure with various layers, including low-k and high-k dielectric layers, p-type and n-type metal layers, a silicon oxide scap layer, and a glue layer. The device also includes a continuous tungsten (W) cap formed by pretreating the gate structure, depositing and etching back W material, etching the scap layer, depositing additional W material, and removing unwanted W material. The fabrication method involves receiving a gate structure, pretreating it, depositing W material, etching back the W material, etching the scap layer, depositing additional W material, and removing unwanted W material.
- The semiconductor device includes a gate structure with multiple layers and a tungsten cap.
- The fabrication method involves pretreating the gate structure, depositing and etching back tungsten material, etching the scap layer, depositing additional tungsten material, and removing unwanted tungsten material.
Potential Applications
- This technology can be used in the fabrication of semiconductor devices, such as integrated circuits.
- It can be applied in various industries that utilize semiconductor devices, including electronics, telecommunications, and computing.
Problems Solved
- The disclosed semiconductor device and fabrication method address the need for a reliable and efficient gate structure in semiconductor devices.
- It solves the problem of maintaining the integrity and performance of the gate structure during fabrication and operation.
Benefits
- The use of a tungsten cap provides enhanced protection and stability to the gate structure.
- The fabrication method ensures precise deposition and removal of tungsten material, resulting in a well-defined and reliable gate structure.
- The combination of different layers in the gate structure improves the overall performance and efficiency of the semiconductor device.
Original Abstract Submitted
Disclosed is a semiconductor device and semiconductor fabrication method. A semiconductor device includes: a gate structure over a semiconductor substrate, having a low-k dielectric layer, a high-k dielectric layer, a p-type work function metal layer, an n-type work function metal layer, a silicon oxide scap layer, and a glue layer; and a continuous tungsten (W) cap over the gate structure that was formed by the gate structure being pretreated, W material being deposited and etched back, the scap layer being etched, additional W material being deposited, and unwanted W material being removed. A semiconductor fabrication method includes: receiving a gate structure; pretreating the gate structure; depositing W material on the gate structure; etching back the W material; etching the scap layer; depositing additional W material; and removing unwanted W material.
