18152950. SEMICONDUCTOR DEVICE STRUCTURE WITH METAL OXIDE LAYER AND METHOD FOR FORMING THE SAME simplified abstract (Taiwan Semiconductor Manufacturing Company, Ltd.)
SEMICONDUCTOR DEVICE STRUCTURE WITH METAL OXIDE LAYER AND METHOD FOR FORMING THE SAME
Organization Name
Taiwan Semiconductor Manufacturing Company, Ltd.
Inventor(s)
Tzu-Ting Liu of Taoyuan City (TW)
Hsiang-Ku Shen of Hsinchu City (TW)
Wen-Tzu Chen of Taoyuan city (TW)
Wen-Ling Chang of Miaoli County (TW)
SEMICONDUCTOR DEVICE STRUCTURE WITH METAL OXIDE LAYER AND METHOD FOR FORMING THE SAME - A simplified explanation of the abstract
This abstract first appeared for US patent application 18152950 titled 'SEMICONDUCTOR DEVICE STRUCTURE WITH METAL OXIDE LAYER AND METHOD FOR FORMING THE SAME
Simplified Explanation
The method involves forming a semiconductor device structure with different materials for the first and second conductive pads.
- Form interconnect structure over substrate
- Create first conductive pad and mask layer over interconnect structure
- Metal oxide layer formed over sidewall of first conductive pad
- Second conductive pad formed over first conductive pad and passing through mask layer
Potential Applications
- Semiconductor manufacturing
- Integrated circuit fabrication
- Electronics industry
Problems Solved
- Enhancing conductivity in semiconductor devices
- Improving interconnect structure reliability
- Facilitating multi-material integration in device fabrication
Benefits
- Increased performance of semiconductor devices
- Enhanced durability and longevity of interconnect structures
- Versatile fabrication process for diverse materials
Original Abstract Submitted
A method for forming a semiconductor device structure is provided. The method includes forming an interconnect structure over a substrate. The method includes forming a first conductive pad and a mask layer over the interconnect structure. The mask layer covers a top surface of the first conductive pad. The method includes forming a metal oxide layer over a sidewall of the first conductive pad. The method includes forming a second conductive pad over the first conductive pad and passing through the mask layer. The first conductive pad and the second conductive pad are made of different materials.
