18152777. SEMICONDUCTOR PACKAGE AND METHOD OF MANUFACTURING THE SAME simplified abstract (Taiwan Semiconductor Manufacturing Co., Ltd.)
Contents
- 1 SEMICONDUCTOR PACKAGE AND METHOD OF MANUFACTURING THE SAME
- 1.1 Organization Name
- 1.2 Inventor(s)
- 1.3 SEMICONDUCTOR PACKAGE AND METHOD OF MANUFACTURING THE SAME - A simplified explanation of the abstract
- 1.4 Simplified Explanation
- 1.5 Potential Applications
- 1.6 Problems Solved
- 1.7 Benefits
- 1.8 Potential Commercial Applications
- 1.9 Possible Prior Art
- 1.10 Original Abstract Submitted
SEMICONDUCTOR PACKAGE AND METHOD OF MANUFACTURING THE SAME
Organization Name
Taiwan Semiconductor Manufacturing Co., Ltd.
Inventor(s)
Bo-Tao Chen of Taipei City (TW)
An-Jhih Su of Taoyuan City (TW)
Ming-Shih Yeh of Hsinchu County (TW)
Der-Chyang Yeh of Hsin-Chu (TW)
SEMICONDUCTOR PACKAGE AND METHOD OF MANUFACTURING THE SAME - A simplified explanation of the abstract
This abstract first appeared for US patent application 18152777 titled 'SEMICONDUCTOR PACKAGE AND METHOD OF MANUFACTURING THE SAME
Simplified Explanation
The present disclosure describes a package structure and a method of manufacturing a package for a semiconductor die. The package structure includes a semiconductor die encapsulated by an encapsulant, a redistribution structure, and bumps. The redistribution structure is electrically connected to the semiconductor die and is disposed on the die and the encapsulant. The bumps are placed on the redistribution structure, which consists of dielectric layers and metallic pattern layers sandwiched between the dielectric layers. The outermost dielectric layer of the redistribution structure has metallic pads with undercut cavities beside them.
- Semiconductor die encapsulated by an encapsulant
- Redistribution structure electrically connected to the semiconductor die
- Bumps placed on the redistribution structure
- Redistribution structure made of dielectric and metallic layers
- Metallic pads with undercut cavities on the outermost dielectric layer
Potential Applications
The technology described in this patent application could be applied in the manufacturing of advanced semiconductor packages for various electronic devices, such as smartphones, tablets, and computers.
Problems Solved
This technology solves the problem of efficiently connecting semiconductor dies to external components while providing protection and stability to the overall package structure.
Benefits
The benefits of this technology include improved electrical connectivity, enhanced structural integrity, and increased reliability of semiconductor packages.
Potential Commercial Applications
The potential commercial applications of this technology include the semiconductor industry, electronics manufacturing companies, and companies producing consumer electronic devices.
Possible Prior Art
One possible prior art for this technology could be the use of redistribution structures in semiconductor packaging to improve electrical connections and package reliability.
Unanswered Questions
How does this technology compare to existing semiconductor packaging methods?
This technology offers improved electrical connectivity and structural integrity compared to traditional packaging methods. It also provides enhanced reliability for semiconductor packages.
What are the potential challenges in implementing this technology on a large scale?
Some potential challenges in implementing this technology on a large scale could include optimizing the manufacturing process, ensuring consistent quality control, and managing costs effectively.
Original Abstract Submitted
The present disclosure provides a package structure and a method of manufacturing a package. The package structure includes a semiconductor die laterally encapsulated by an encapsulant, a redistribution structure and bumps. The redistribution structure is disposed on the semiconductor die and the encapsulant, and is electrically connected with the at least one semiconductor die. The bumps are disposed on the redistribution structure. The redistribution structure includes dielectric layers and metallic pattern layers sandwiched between the dielectric layers. The redistribution structure includes metallic pads on an outermost dielectric layer of the dielectric layers, and the outmost dielectric layer has undercut cavities beside the metallic pads.
