18152154. INTEGRATED CIRCUIT, SEMICONDUCTOR DEVICE AND METHOD OF FABRICATING THE SAME simplified abstract (Taiwan Semiconductor Manufacturing Co., Ltd.)

INTEGRATED CIRCUIT, SEMICONDUCTOR DEVICE AND METHOD OF FABRICATING THE SAME

Organization Name

Taiwan Semiconductor Manufacturing Co., Ltd.

Inventor(s)

Yu-Wei Jiang of Hsinchu (TW)

Chieh-Fang Chen of Hsinchu County (TW)

Yen-Chung Ho of Hsinchu (TW)

Pin-Cheng Hsu of Hsinchu County (TW)

Feng-Cheng Yang of Hsinchu County (TW)

Chung-Te Lin of Tainan City (TW)

INTEGRATED CIRCUIT, SEMICONDUCTOR DEVICE AND METHOD OF FABRICATING THE SAME - A simplified explanation of the abstract

This abstract first appeared for US patent application 18152154 titled 'INTEGRATED CIRCUIT, SEMICONDUCTOR DEVICE AND METHOD OF FABRICATING THE SAME

Simplified Explanation

The semiconductor device described in the abstract includes various layers and electrodes that work together to enable the functioning of the device. Here are some key points to explain the patent/innovation:

• The device consists of a gate electrode, gate dielectric layer, channel layer, insulating layer, source/drain electrodes, second dielectric layer, and a stop segment.
• The gate electrode is located within a dielectric layer on top of a substrate.
• The gate dielectric layer is positioned above the gate electrode.
• The channel layer sits on the gate dielectric layer.
• The insulating layer is above the channel layer.
• The source/drain electrodes are within the insulating layer and connected to the channel layer.
• The second dielectric layer is adjacent to one of the source/drain electrodes.
• The stop segment is embedded in the second dielectric layer.

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1. 1. 1. Potential Applications of this Technology

• This semiconductor device can be used in various electronic applications such as integrated circuits, microprocessors, and memory devices.

1. 1. 1. Problems Solved by this Technology

• This technology helps in improving the performance and efficiency of semiconductor devices by providing a structured and efficient layout of the various components.

1. 1. 1. Benefits of this Technology

• The design of this semiconductor device allows for better control and manipulation of electrical signals, leading to enhanced functionality and reliability.

1. 1. 1. Potential Commercial Applications of this Technology
         1. Optimizing Semiconductor Device Layout for Improved Performance

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1. 1. 1. Possible Prior Art

There may be prior art related to the optimization of semiconductor device layouts for improved performance and efficiency. Research and patents in the field of semiconductor technology may reveal similar innovations.

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1. 1. 1. 1. Unanswered Questions

1. 1. 1. How does this semiconductor device compare to existing technologies in terms of performance and efficiency?

The article does not provide a direct comparison with existing technologies in the market, making it difficult to assess the competitive advantage of this innovation.

1. 1. 1. What specific materials are used in the construction of the various layers and electrodes in this semiconductor device?

The article does not detail the specific materials used in each component of the semiconductor device, which could be crucial information for understanding its manufacturing process and properties.

Original Abstract Submitted

Provided is a semiconductor device includes a gate electrode, a gate dielectric layer, a channel layer, an insulating layer, a first source/drain electrode and a second source/drain electrode, a second dielectric layer, and a stop segment. The gate electrode is located within a first dielectric layer that overlies a substrate. The gate dielectric layer is located over the gate electrode. The channel layer is located on the gate dielectric layer. The insulating layer is located over the channel layer. The first source/drain electrode and the second source/drain electrode are located in the insulating layer, and connected to the channel layer. The second dielectric layer is beside one of the first source/drain electrode and the second source/drain electrode. The stop segment is embedded in the second dielectric layer.