18152141. SEMICONDUCTOR STRUCTURE, STACKED STRUCTURE, AND MANUFACTURING METHOD THEREOF simplified abstract (Taiwan Semiconductor Manufacturing Co., Ltd.)
Contents
- 1 SEMICONDUCTOR STRUCTURE, STACKED STRUCTURE, AND MANUFACTURING METHOD THEREOF
- 1.1 Organization Name
- 1.2 Inventor(s)
- 1.3 SEMICONDUCTOR STRUCTURE, STACKED STRUCTURE, AND MANUFACTURING METHOD THEREOF - A simplified explanation of the abstract
- 1.4 Simplified Explanation
- 1.5 Potential Applications
- 1.6 Problems Solved
- 1.7 Benefits
- 1.8 Potential Commercial Applications
- 1.9 Possible Prior Art
- 1.10 How does this technology compare to existing semiconductor packaging methods?
- 1.11 What are the potential challenges in implementing this technology on a large scale?
- 1.12 Original Abstract Submitted
SEMICONDUCTOR STRUCTURE, STACKED STRUCTURE, AND MANUFACTURING METHOD THEREOF
Organization Name
Taiwan Semiconductor Manufacturing Co., Ltd.
Inventor(s)
Wei-Chung Chang of Taipei City (TW)
Ming-Che Ho of Tainan City (TW)
Hung-Jui Kuo of Hsinchu City (TW)
SEMICONDUCTOR STRUCTURE, STACKED STRUCTURE, AND MANUFACTURING METHOD THEREOF - A simplified explanation of the abstract
This abstract first appeared for US patent application 18152141 titled 'SEMICONDUCTOR STRUCTURE, STACKED STRUCTURE, AND MANUFACTURING METHOD THEREOF
Simplified Explanation
The semiconductor structure described in the patent application includes a semiconductor die, a redistribution circuit structure, and a terminal. The redistribution circuit structure is placed on and connected to the semiconductor die, while the terminal is placed on and connected to the redistribution circuit structure. The terminal consists of an under-bump metallization (UBM) and a capping layer, with the UBM having a recess that is filled by the capping layer.
- The semiconductor structure comprises a semiconductor die, a redistribution circuit structure, and a terminal.
- The redistribution circuit structure is located on the semiconductor die and is electrically connected to it.
- The terminal is positioned on the redistribution circuit structure and is electrically connected to it.
- The terminal includes an under-bump metallization (UBM) and a capping layer.
- The UBM has a recess that is filled by the capping layer.
Potential Applications
The technology described in this patent application could be applied in the following areas:
- Semiconductor manufacturing
- Electronic packaging
- Microelectronics
Problems Solved
This technology addresses the following issues:
- Improving electrical connections in semiconductor structures
- Enhancing the performance of semiconductor devices
- Increasing the reliability of electronic components
Benefits
The benefits of this technology include:
- Improved electrical connectivity
- Enhanced device performance
- Increased reliability of electronic systems
Potential Commercial Applications
The potential commercial applications of this technology could include:
- Semiconductor industry
- Electronics manufacturing companies
- Research and development organizations
Possible Prior Art
One possible prior art related to this technology could be the use of UBM and capping layers in semiconductor packaging to improve electrical connections and device performance.
Unanswered Questions
How does this technology compare to existing semiconductor packaging methods?
This article does not provide a direct comparison between this technology and existing semiconductor packaging methods. Further research and analysis would be needed to determine the specific advantages and disadvantages of this approach compared to others.
What are the potential challenges in implementing this technology on a large scale?
The article does not address the potential challenges in implementing this technology on a large scale. Factors such as cost, scalability, and compatibility with existing manufacturing processes could pose challenges that need to be explored further.
Original Abstract Submitted
A semiconductor structure includes a semiconductor die, a redistribution circuit structure, and a terminal. The redistribution circuit structure is disposed on and electrically coupled to the semiconductor die. The terminal is disposed on and electrically coupled to the redistribution circuit structure, where the redistribution circuit structure is disposed between the semiconductor die and the terminal, and the terminal includes an under-bump metallization (UBM) and a capping layer. The UBM is disposed on and electrically coupled to the redistribution circuit structure, where the UBM includes a recess. The capping layer is disposed on and electrically coupled to the UBM, where the UBM is between the capping layer and the redistribution circuit structure, and the capping layer fills the recess of the UBM.
