18151930. METHOD FOR USING RADIATION SOURCE APPARATUS simplified abstract (TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.)

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METHOD FOR USING RADIATION SOURCE APPARATUS

Organization Name

TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.

Inventor(s)

Chiao-Hua Cheng of Tainan City (TW)

Hsin-Feng Chen of Yilan City (TW)

Yu-Fa Lo of Kaohsiung City (TW)

Yu-Kuang Sun of Hsinchu City (TW)

Wei-Shin Cheng of Hsinchu City (TW)

Yu-Huan Chen of Hsinchu City (TW)

Ming-Hsun Tsai of Hsinchu City (TW)

Cheng-Hao Lai of Taichung City (TW)

Cheng-Hsuan Wu of New Taipei City (TW)

Shang-Chieh Chien of New Taipei City (TW)

Heng-Hsin Liu of New Taipei City (TW)

Li-Jui Chen of Hsinchu City (TW)

Sheng-Kang Yu of Hsinchu City (TW)

METHOD FOR USING RADIATION SOURCE APPARATUS - A simplified explanation of the abstract

This abstract first appeared for US patent application 18151930 titled 'METHOD FOR USING RADIATION SOURCE APPARATUS

Simplified Explanation

The abstract describes a method for using extreme ultraviolet (EUV) radiation source in a lithography process. After the lithography process, an extraction tube is inserted into the EUV radiation source to clean its collector.

  • The method involves using extreme ultraviolet (EUV) radiation source in a lithography process.
  • After the lithography process, an extraction tube is inserted into the EUV radiation source.
  • The extraction tube is used to clean the collector of the EUV radiation source.

Potential Applications

  • Semiconductor manufacturing: The method can be used in the production of semiconductor devices, where lithography processes are crucial.
  • Nanotechnology: The use of EUV radiation source can enable precise and accurate fabrication of nanostructures.

Problems Solved

  • Collector cleaning: The method provides a solution for cleaning the collector of an EUV radiation source, which can become contaminated during the lithography process.
  • Maintaining performance: By cleaning the collector, the method helps to maintain the performance and efficiency of the EUV radiation source.

Benefits

  • Improved lithography process: The use of EUV radiation source can enhance the quality and precision of the lithography process.
  • Extended lifespan: Regular cleaning of the collector can prolong the lifespan of the EUV radiation source.
  • Cost-effective: By cleaning the collector instead of replacing it, the method offers a cost-effective solution for maintaining the EUV radiation source.


Original Abstract Submitted

A method for using an extreme ultraviolet radiation source is provided. The method includes performing a lithography process using an extreme ultraviolet (EUV) radiation source; after the lithography processes, inserting an extraction tube into a vessel of the EUV radiation source; and cleaning a collector of the EUV radiation source by using the extraction tube.

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