18151843. DUAL BAND FAN OUT DEVICE AND METHOD simplified abstract (Taiwan Semiconductor Manufacturing Company, Ltd.)

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DUAL BAND FAN OUT DEVICE AND METHOD

Organization Name

Taiwan Semiconductor Manufacturing Company, Ltd.

Inventor(s)

Wen-Shiang Liao of Toufen Township (TW)

DUAL BAND FAN OUT DEVICE AND METHOD - A simplified explanation of the abstract

This abstract first appeared for US patent application 18151843 titled 'DUAL BAND FAN OUT DEVICE AND METHOD

Simplified Explanation

Embodiments provide an integrated package device and method of forming the same, the device having dual band functionality by way of a first antenna and a second antenna. The first antenna can transmit/receive high frequency radio frequency (RF) signals and the second antenna can transmit/receive lower frequency RF signals. A high-k dielectric zone is provided aligned to the first antenna. An oscillation region may be aligned to the embedded antenna(s).

  • Dual band functionality with first and second antennas
  • First antenna for high frequency RF signals, second antenna for lower frequency RF signals
  • High-k dielectric zone aligned to first antenna
  • Oscillation region aligned to embedded antenna(s)

Potential Applications

  • Telecommunications
  • Wireless communication devices
  • Internet of Things (IoT) devices
  • Radar systems

Problems Solved

  • Limited bandwidth coverage
  • Interference between high and low frequency signals
  • Inefficient use of antenna space

Benefits

  • Improved signal transmission and reception
  • Enhanced performance in both high and low frequency bands
  • Compact design with integrated antennas
  • Increased efficiency in communication systems


Original Abstract Submitted

Embodiments provide an integrated package device and method of forming the same, the device having dual band functionality by way of a first antenna and a second antenna. The first antenna can transmit/receive high frequency radio frequency (RF) signals and the second antenna can transmit/receive lower frequency RF signals. A high-k dielectric zone is provided aligned to the first antenna. An oscillation region may be aligned to the embedded antenna(s).