18151556. INTEGRATED CIRCUIT PACKAGES AND METHODS OF FORMING THE SAME simplified abstract (TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.)

INTEGRATED CIRCUIT PACKAGES AND METHODS OF FORMING THE SAME

Organization Name

TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.

Inventor(s)

Der-Chyang Yeh of Hsinchu (TW)

Kuo-Chiang Ting of Hsinchu (TW)

Yu-Hsiung Wang of Zhubei (TW)

Chao-Wen Shih of Zhubei City (TW)

Sung-Feng Yeh of Taipei (TW)

Ta Hao Sung of Hsinchu (TW)

Cheng-Wei Huang of Hsinchu (TW)

Yen-Ping Wang of Hemei Township (TW)

Chang-Wen Huang of Hsinchu (TW)

Sheng-Ta Lin of Gongguan Township (TW)

Li-Cheng Hu of Hsinchu (TW)

Gao-Long Wu of Hsinchu (TW)

INTEGRATED CIRCUIT PACKAGES AND METHODS OF FORMING THE SAME - A simplified explanation of the abstract

This abstract first appeared for US patent application 18151556 titled 'INTEGRATED CIRCUIT PACKAGES AND METHODS OF FORMING THE SAME

Simplified Explanation

- Crack stopper structure surrounds an embedded integrated circuit die - Structure includes multiple layers separated by a fill layer - Layers may include sublayers for adhesion, hardness buffering, and material gradients - Sublayers help transition between different layers of the crack stopper structure

Potential Applications

- Protection of integrated circuit dies from cracking or damage - Enhanced durability and reliability of electronic devices

Problems Solved

- Preventing cracks in integrated circuit dies - Improving overall longevity of electronic devices

Benefits

- Increased protection for integrated circuit dies - Extended lifespan of electronic devices - Enhanced performance and reliability of electronic components

Original Abstract Submitted

Embodiments include a crack stopper structure surrounding an embedded integrated circuit die, and the formation thereof. The crack stopper structure may include multiple layers separated by a fill layer. The layers of the crack stopper may include multiple sublayers, some of the sublayers providing adhesion, hardness buffering, and material gradients for transitioning from one layer of the crack stopper structure to another layer of the crack stopper structure.