18151163. LITHOGRAPHY SYSTEM AND OPERATION METHOD THEREOF simplified abstract (TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.)

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LITHOGRAPHY SYSTEM AND OPERATION METHOD THEREOF

Organization Name

TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.

Inventor(s)

Chi-Hung Liao of New Taipei City (TW)

Min-Cheng Wu of Taichung County (TW)

LITHOGRAPHY SYSTEM AND OPERATION METHOD THEREOF - A simplified explanation of the abstract

This abstract first appeared for US patent application 18151163 titled 'LITHOGRAPHY SYSTEM AND OPERATION METHOD THEREOF

Simplified Explanation

The patent application describes a method for generating extreme ultraviolet (EUV) light using droplet shooting and deflection techniques. Here is a simplified explanation of the abstract:

  • A droplet generator shoots a primary droplet and a satellite droplet in the same initial direction.
  • A force is applied to both droplets, causing them to deflect in different directions.
  • The satellite droplet deflects more than the primary droplet.
  • An excitation laser hits the primary droplet, which has deflected in a different direction, to generate EUV light.

Potential applications of this technology:

  • EUV lithography: The generated EUV light can be used in the semiconductor industry for high-resolution lithography processes.
  • Scientific research: EUV light is valuable for studying materials and biological samples at the nanoscale.

Problems solved by this technology:

  • Enhanced EUV light generation: By using droplet shooting and deflection techniques, the patent application proposes a method to improve the generation of EUV light.
  • Precision control: The ability to apply forces to droplets and control their deflection allows for precise targeting of the primary droplet by the excitation laser.

Benefits of this technology:

  • Improved efficiency: The method aims to increase the deflection of the satellite droplet, resulting in more efficient EUV light generation.
  • Enhanced resolution: EUV lithography using this technology can potentially achieve higher resolution in semiconductor manufacturing.
  • Versatile research tool: The ability to generate EUV light with precise control opens up new possibilities for scientific research in various fields.


Original Abstract Submitted

A method includes shooting a primary droplet and a satellite droplet from a droplet generator along a common initial direction; applying a force to the primary droplet and the satellite droplet, wherein after applying the force, the primary droplet has a first deflection toward a first direction different than the common initial direction, and the satellite droplet has a second deflection toward a second direction different than the common initial direction, wherein the second deflection of the satellite droplet is greater than the first deflection of the primary droplet; and generating an extreme ultraviolet (EUV) light using an excitation laser hitting the primary droplet with the first deflection.

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