18151059. SEMICONDUCTOR DIE PACKAGE AND METHODS OF FORMATION simplified abstract (TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.)

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SEMICONDUCTOR DIE PACKAGE AND METHODS OF FORMATION

Organization Name

TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.

Inventor(s)

Shu-Hui Su of Tucheng City (TW)

Hsin-Li Cheng of Hsin Chu (TW)

YingKit Felix Tsui of Cupertino CA (US)

SEMICONDUCTOR DIE PACKAGE AND METHODS OF FORMATION - A simplified explanation of the abstract

This abstract first appeared for US patent application 18151059 titled 'SEMICONDUCTOR DIE PACKAGE AND METHODS OF FORMATION

Simplified Explanation

The semiconductor die package includes multiple decoupling trench capacitor regions with structures of varying depths to provide sufficient capacitance for circuit decoupling parameters while reducing the risk of warping or breaking.

  • The semiconductor die package includes a plurality of decoupling trench capacitor regions.
  • At least two or more of the decoupling trench capacitor regions have structures with different depths.
  • The depths of the structures are selected to meet circuit decoupling parameters and minimize the risk of package damage.

Potential Applications

This technology could be applied in various semiconductor devices where decoupling capacitors are needed to ensure proper circuit operation and reliability.

Problems Solved

This innovation addresses the challenge of providing adequate capacitance for circuit decoupling while minimizing the risk of warping, breaking, or cracking in semiconductor die packages.

Benefits

The benefits of this technology include improved circuit performance, reduced risk of package damage, and enhanced reliability in semiconductor devices.

Potential Commercial Applications

This technology could be valuable in the semiconductor industry for applications such as integrated circuits, microprocessors, and other electronic devices requiring decoupling capacitors.

Possible Prior Art

One possible prior art in this field could be the use of traditional decoupling capacitors in semiconductor devices, which may not offer the same level of customization and optimization as the decoupling trench capacitor regions described in this patent application.

Unanswered Questions

How does the depth of the decoupling trench capacitor structures impact the overall performance of the semiconductor die package?

The depth of the decoupling trench capacitor structures plays a crucial role in determining the capacitance provided and the overall effectiveness of circuit decoupling in the semiconductor die package.

What manufacturing processes are involved in creating the decoupling trench capacitor regions with structures of varying depths?

The manufacturing processes for creating these decoupling trench capacitor regions with different depths may involve specialized techniques such as etching, deposition, and patterning to achieve the desired capacitance levels and structural integrity in the semiconductor die package.


Original Abstract Submitted

A semiconductor die included in a semiconductor die package may include a plurality of decoupling trench capacitor regions in a device region of the semiconductor die. At least two or more of the decoupling trench capacitor regions include decoupling trench capacitor structures having different depths. The depths of the decoupling trench capacitor structures in the decoupling trench capacitor regions may be selected to provide sufficient capacitance so as to satisfy circuit decoupling parameters for circuits of the semiconductor die package, while reducing the likelihood of warping, breaking, and/or cracking of the semiconductor die package.