18150523. THREE-DIMENSIONAL SEMICONDUCTOR DEVICES AND METHOD OF MANUFACTURING THE SAME simplified abstract (SAMSUNG ELECTRONICS CO., LTD.)
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THREE-DIMENSIONAL SEMICONDUCTOR DEVICES AND METHOD OF MANUFACTURING THE SAME
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THREE-DIMENSIONAL SEMICONDUCTOR DEVICES AND METHOD OF MANUFACTURING THE SAME - A simplified explanation of the abstract
This abstract first appeared for US patent application 18150523 titled 'THREE-DIMENSIONAL SEMICONDUCTOR DEVICES AND METHOD OF MANUFACTURING THE SAME
Simplified Explanation
The patent application describes a three-dimensional semiconductor device that includes multiple transistors and an interconnection portion. The transistors are divided into two groups, each with a different gate insulating film composition.
- The device includes a first substrate and a second substrate, with the first substrate hosting a group of first transistors and the second substrate hosting a group of second transistors.
- The first transistors have a gate insulating film with a lower hydrogen content compared to the second transistors.
- An interconnection portion is present to electrically connect the first and second transistors.
Potential applications of this technology:
- Three-dimensional semiconductor devices can be used in various electronic devices, such as smartphones, computers, and IoT devices.
- The technology enables the integration of multiple transistors in a compact space, allowing for higher performance and functionality in electronic devices.
Problems solved by this technology:
- Three-dimensional integration of transistors can be challenging due to the need for interconnections between different layers. This technology provides a solution for connecting transistors in a three-dimensional structure.
- The different gate insulating film compositions help optimize the performance and reliability of the transistors in their respective layers.
Benefits of this technology:
- Improved performance: The three-dimensional structure allows for increased transistor density, leading to enhanced device performance.
- Space efficiency: By stacking transistors in a three-dimensional configuration, the overall footprint of the device can be reduced, enabling smaller and more compact electronic devices.
- Enhanced functionality: The interconnection portion enables efficient communication between different layers of transistors, enabling complex circuitry and advanced functionalities.
Original Abstract Submitted
A three-dimensional semiconductor device includes a first substrate; a plurality of first transistors on the first substrate; a second substrate on the plurality of first transistors; a plurality of second transistors on the second substrate; and an interconnection portion electrically connecting the plurality of first transistors and the plurality of second transistors. Each of the plurality of first transistors includes a first gate insulating film on the first substrate and having a first hydrogen content. Each of the plurality of second transistors includes a second gate insulating film on the second substrate and having a second hydrogen content. The second hydrogen content is greater than the first hydrogen content.
