18150362. PIXEL SENSOR ISOLATION STRUCTURES AND METHODS OF FORMING THE SAME simplified abstract (Taiwan Semiconductor Manufacturing Company, Ltd.)
Contents
- 1 PIXEL SENSOR ISOLATION STRUCTURES AND METHODS OF FORMING THE SAME
- 1.1 Organization Name
- 1.2 Inventor(s)
- 1.3 PIXEL SENSOR ISOLATION STRUCTURES AND METHODS OF FORMING THE SAME - A simplified explanation of the abstract
- 1.4 Simplified Explanation
- 1.5 Potential Applications
- 1.6 Problems Solved
- 1.7 Benefits
- 1.8 Potential Commercial Applications
- 1.9 Possible Prior Art
- 1.10 How does the self-aligned plug formation contribute to preventing trench loading in the pixel sensor manufacturing process?
- 1.11 What are the specific raw materials used in forming the pixel sensor, and how does the technology conserve these materials?
- 1.12 Original Abstract Submitted
PIXEL SENSOR ISOLATION STRUCTURES AND METHODS OF FORMING THE SAME
Organization Name
Taiwan Semiconductor Manufacturing Company, Ltd.
Inventor(s)
Ming-Chyi Liu of Hsinchu City (TW)
Shih-Chang Liu of Alian Township (TW)
Ru-Liang Lee of Hsinchu City (TW)
PIXEL SENSOR ISOLATION STRUCTURES AND METHODS OF FORMING THE SAME - A simplified explanation of the abstract
This abstract first appeared for US patent application 18150362 titled 'PIXEL SENSOR ISOLATION STRUCTURES AND METHODS OF FORMING THE SAME
Simplified Explanation
A self-aligned plug may be formed between deep trench isolation (DTI) etching cycles. Accordingly, etch depth in areas of a pixel sensor with large CDs (e.g., at an X-road) is reduced, which prevents trench loading. As a result, a floating diffusion (FD) region, associated with photodiodes of the pixel sensor, is not damaged during the DTI etching cycles. Reduced chances of damage to the FD region improve performance of the pixel sensor and prevent electrical shorts and failures, which increases yield and conserves time and raw materials used in forming the pixel sensor.
- Formation of self-aligned plug between DTI etching cycles
- Reduction of etch depth in areas with large CDs to prevent trench loading
- Protection of FD region associated with photodiodes during DTI etching cycles
- Improved performance of pixel sensor and prevention of electrical shorts and failures
- Increased yield and conservation of time and raw materials
Potential Applications
The technology can be applied in the manufacturing of pixel sensors for various imaging devices such as digital cameras, smartphones, and medical imaging equipment.
Problems Solved
1. Damage to the FD region during DTI etching cycles 2. Electrical shorts and failures in pixel sensors
Benefits
1. Improved performance of pixel sensors 2. Increased yield in manufacturing process 3. Conservation of time and raw materials
Potential Commercial Applications
Optimizing Pixel Sensor Manufacturing Process for Enhanced Performance
Possible Prior Art
Prior art related to optimizing etching processes in semiconductor manufacturing may exist, but specific examples are not provided in the abstract.
Unanswered Questions
How does the self-aligned plug formation contribute to preventing trench loading in the pixel sensor manufacturing process?
The abstract mentions that the self-aligned plug formation helps prevent trench loading, but it does not elaborate on the specific mechanism or process involved in achieving this result.
What are the specific raw materials used in forming the pixel sensor, and how does the technology conserve these materials?
While the abstract mentions the conservation of raw materials in forming the pixel sensor, it does not provide details on the types of materials used or the specific methods through which conservation is achieved.
Original Abstract Submitted
A self-aligned plug may be formed between deep trench isolation (DTI) etching cycles. Accordingly, etch depth in areas of a pixel sensor with large CDs (e.g., at an X-road) is reduced, which prevents trench loading. As a result, a floating diffusion (FD) region, associated with photodiodes of the pixel sensor, is not damaged during the DTI etching cycles. Reduced chances of damage to the FD region improves performance of the pixel sensor and prevents electrical shorts and failures, which increases yield and conserves time and raw materials used in forming the pixel sensor.
