18150256. INTEGRATED CIRCUIT PACKAGES AND METHODS simplified abstract (TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.)

From WikiPatents
Jump to navigation Jump to search

INTEGRATED CIRCUIT PACKAGES AND METHODS

Organization Name

TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.

Inventor(s)

Hsu-Hsien Chen of Hsinchu (TW)

Chen-Shien Chen of Zhubei City (TW)

Ting Hao Kuo of Hsinchu (TW)

Chi-Yen Lin of Tainan City (TW)

Yu-Chih Huang of Hsinchu (TW)

INTEGRATED CIRCUIT PACKAGES AND METHODS - A simplified explanation of the abstract

This abstract first appeared for US patent application 18150256 titled 'INTEGRATED CIRCUIT PACKAGES AND METHODS

Simplified Explanation

The integrated circuit package described in the abstract includes integrated circuit dies with slanted sidewalls, forming a unique structure that allows for efficient packaging and interconnectivity. Here are some key points to explain the patent/innovation:

  • The package includes a first integrated circuit die with a first substrate and a first interconnect structure on the bottom surface.
  • A first gap-fill dielectric layer surrounds the first integrated circuit die, providing insulation and support.
  • A second integrated circuit die is positioned underneath the first die, with a second gap-fill dielectric layer around it.
  • The slanted sidewalls of the dies create angles that optimize the space and interconnectivity within the package.
      1. Potential Applications

- High-density memory modules - Advanced microprocessors - Data storage devices

      1. Problems Solved

- Improved thermal management - Enhanced electrical performance - Increased packaging density

      1. Benefits

- Higher integration levels - Enhanced signal transmission - Improved reliability and durability

      1. Potential Commercial Applications
        1. Advanced Semiconductor Packaging Solutions
      1. Possible Prior Art

- Traditional integrated circuit packaging methods - Conventional dielectric materials and structures

        1. Unanswered Questions
      1. How does the slanted sidewall design impact the overall performance of the integrated circuit package?

The slanted sidewall design allows for more efficient use of space and improved interconnectivity within the package, potentially leading to better performance in terms of speed and reliability.

      1. What manufacturing processes are involved in creating the slanted sidewalls of the integrated circuit dies?

The manufacturing processes for creating slanted sidewalls may involve specialized etching techniques or deposition methods to achieve the desired angles and structures. Further details on these processes would provide a clearer understanding of the manufacturing requirements for this innovation.


Original Abstract Submitted

An integrated circuit package including integrated circuit dies with slanted sidewalls and a method of forming are provided. The integrated circuit package may include a first integrated circuit die, a first gap-fill dielectric layer around the first integrated circuit die, a second integrated circuit die underneath the first integrated circuit die, and a second gap-fill dielectric layer around the second integrated circuit die. The first integrated circuit die may include a first substrate, wherein a first angle is between a first sidewall of the first substrate and a bottom surface of the first substrate, and a first interconnect structure on the bottom surface of the first substrate, wherein a second angle is between a first sidewall of the first interconnect structure and the bottom surface of the first substrate. The first angle may be larger than the second angle.

Retrieved from "http://wikipatents.org/index.php?title=18150256._INTEGRATED_CIRCUIT_PACKAGES_AND_METHODS_simplified_abstract_(TAIWAN_SEMICONDUCTOR_MANUFACTURING_COMPANY,_LTD.)&oldid=50949"