18149806. INTEGRATED CIRCUIT PACKAGE AND METHOD simplified abstract (Taiwan Semiconductor Manufacturing Co., Ltd.)
Contents
- 1 INTEGRATED CIRCUIT PACKAGE AND METHOD
- 1.1 Organization Name
- 1.2 Inventor(s)
- 1.3 INTEGRATED CIRCUIT PACKAGE AND METHOD - A simplified explanation of the abstract
- 1.4 Simplified Explanation
- 1.5 Potential Applications
- 1.6 Problems Solved
- 1.7 Benefits
- 1.8 Potential Commercial Applications
- 1.9 Possible Prior Art
- 1.10 Unanswered Questions
- 1.11 Original Abstract Submitted
INTEGRATED CIRCUIT PACKAGE AND METHOD
Organization Name
Taiwan Semiconductor Manufacturing Co., Ltd.
Inventor(s)
Chih-Wei Wu of Zhuangwei Township (TW)
Ching-Feng Yang of Taipei (TW)
Ying-Ching Shih of Hsinchu (TW)
Wen-Chih Chiou of Zhunan Township (TW)
INTEGRATED CIRCUIT PACKAGE AND METHOD - A simplified explanation of the abstract
This abstract first appeared for US patent application 18149806 titled 'INTEGRATED CIRCUIT PACKAGE AND METHOD
Simplified Explanation
The method described in the patent application involves manufacturing a semiconductor device by singulating a first semiconductor die from a second semiconductor die using a series of dicing processes and thinning steps.
- Form a first bonding layer over a substrate of a first wafer containing two semiconductor dies.
- Perform a first dicing process to create grooves between the two dies.
- Perform a second dicing process to create a trench between the grooves.
- Thin the backside of the substrate until the first semiconductor die is separated from the second semiconductor die.
Potential Applications
This technology could be applied in the manufacturing of various semiconductor devices, such as integrated circuits, sensors, and microprocessors.
Problems Solved
This method solves the problem of efficiently singulating individual semiconductor dies from a wafer containing multiple dies, improving the overall yield and quality of the semiconductor devices.
Benefits
The benefits of this technology include increased productivity, reduced manufacturing costs, and improved accuracy in singulating semiconductor dies.
Potential Commercial Applications
"Semiconductor Device Manufacturing Method" - Optimizing the production process for semiconductor devices.
Possible Prior Art
There may be prior art related to methods of singulating semiconductor dies from wafers, but specific examples are not provided in this context.
Unanswered Questions
How does this method compare to traditional die singulation techniques?
This article does not provide a direct comparison between this method and traditional die singulation techniques in terms of efficiency, cost, or quality.
What are the specific semiconductor materials compatible with this manufacturing method?
The article does not specify the types of semiconductor materials that can be used with this manufacturing method, leaving room for further exploration and research in this area.
Original Abstract Submitted
A method of manufacturing a semiconductor device includes forming a first bonding layer over a substrate of a first wafer, the first wafer including a first semiconductor die and a second semiconductor die, performing a first dicing process to form two grooves that extend through the first bonding layer, the two grooves being disposed between the first semiconductor die and the second semiconductor die, performing a second dicing process to form a trench that extends through the first bonding layer and partially through the substrate of the first wafer, where the trench is disposed between the two grooves, and thinning a backside of the substrate of the first wafer until the first semiconductor die is singulated from the second semiconductor die.
