18149800. SEMICONDUCTOR MEMORY DEVICE AND METHOD OF FORMING THE SAME simplified abstract (SAMSUNG ELECTRONICS CO., LTD.)

SEMICONDUCTOR MEMORY DEVICE AND METHOD OF FORMING THE SAME

Organization Name

SAMSUNG ELECTRONICS CO., LTD.

Inventor(s)

Jonghyeok Kim of Suwon-si (KR)

Jamin Koo of Suwon-si (KR)

Beom Seo Kim of Suwon-si (KR)

Wonseok Yoo of Suwon-si (KR)

SEMICONDUCTOR MEMORY DEVICE AND METHOD OF FORMING THE SAME - A simplified explanation of the abstract

This abstract first appeared for US patent application 18149800 titled 'SEMICONDUCTOR MEMORY DEVICE AND METHOD OF FORMING THE SAME

Simplified Explanation

The patent application describes a semiconductor memory device with specific patterns and structures to improve its performance and functionality. Here is a simplified explanation of the abstract:

• The semiconductor memory device includes an active pattern defined by a device isolation pattern, which helps isolate different components of the device.
• A bit line extends in a first direction on the device isolation pattern and the active pattern, allowing for the transfer of data within the memory device.
• A bit line capping pattern is stacked on top of the bit line and includes three sequentially stacked patterns: a first capping pattern, a second capping pattern, and a third capping pattern. These patterns provide additional protection and functionality to the bit line.
• A shield pattern is also included, covering one side of the bit line. The upper surface of the shield pattern is positioned at a lower height than the upper surface of the first capping pattern, ensuring proper functionality and performance of the memory device.

Potential applications of this technology:

• Semiconductor memory devices are widely used in various electronic devices, including computers, smartphones, and tablets. This innovation can enhance the performance and functionality of these devices.
• The improved memory device can be utilized in data centers and servers, where high-speed and reliable memory is crucial for efficient data processing and storage.

Problems solved by this technology:

• The specific patterns and structures described in the patent application address issues related to data transfer, isolation, and protection within a semiconductor memory device.
• By optimizing the positioning and stacking of the capping and shield patterns, the patent application aims to improve the overall performance and reliability of the memory device.

Benefits of this technology:

• The semiconductor memory device with the described patterns and structures can offer faster data transfer rates and improved data integrity.
• The optimized capping and shield patterns provide enhanced protection against external interference and noise, resulting in more reliable memory operations.
• The innovation can potentially lead to more efficient and compact memory devices, allowing for increased memory capacity in smaller form factors.

Original Abstract Submitted

A semiconductor memory device including an active pattern defined by a device isolation pattern, a bit line extending in a first direction on the device isolation pattern and the active pattern, a bit line capping pattern including a first capping pattern, a second capping pattern, and a third capping pattern sequentially stacked on an upper surface of the bit line, and a shield pattern covering one side of the bit line may be provided. An upper surface of the shield pattern may be at a height lower than an upper surface of the first capping pattern.