18149715. TRANSISTOR DEVICE WITH MULTI-LAYER CHANNEL STRUCTURE simplified abstract (TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.)

TRANSISTOR DEVICE WITH MULTI-LAYER CHANNEL STRUCTURE

Organization Name

TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.

Inventor(s)

Ya-Yun Cheng of Taichung City (TW)

Wen-Ling Lu of Taoyuan County (TW)

Yu-Chien Chiu of Hsinchu County (TW)

Chung-Wei Wu of Ju-Bei City (TW)

Zhiqiang Wu of Hsinchu County (TW)

TRANSISTOR DEVICE WITH MULTI-LAYER CHANNEL STRUCTURE - A simplified explanation of the abstract

This abstract first appeared for US patent application 18149715 titled 'TRANSISTOR DEVICE WITH MULTI-LAYER CHANNEL STRUCTURE

Simplified Explanation

The integrated chip described in the patent application includes a gate layer, an insulator layer, a channel structure, and a pair of source/drains. The channel structure consists of three different semiconductor layers: a first channel layer, a second channel layer, and a third channel layer.

• The integrated chip includes a gate layer, insulator layer, channel structure, and pair of source/drains.
• The channel structure is made up of three different semiconductor layers: first, second, and third channel layers.
• The source/drains are laterally spaced apart by a dielectric layer.

Potential Applications

The technology described in this patent application could be used in:

• Semiconductor manufacturing
• Integrated circuit design
• Electronics industry

Problems Solved

This technology helps address issues related to:

• Improving performance of integrated chips
• Enhancing efficiency of semiconductor devices
• Increasing reliability of electronic components

Benefits

The benefits of this technology include:

• Higher performance capabilities
• Improved functionality of integrated circuits
• Enhanced durability of semiconductor devices

Potential Commercial Applications

The potential commercial applications of this technology could be in:

• Consumer electronics
• Telecommunications
• Automotive industry

Possible Prior Art

One possible prior art for this technology could be:

• Previous patents related to semiconductor device structures and manufacturing processes.

Question 1:

What specific types of semiconductors are used in the first, second, and third channel layers?

Answer:

The patent application does not specify the exact types of semiconductors used in the different channel layers. Further research or examination of the full patent document may provide more detailed information on this aspect.

Question 2:

How does the dielectric layer contribute to the overall performance of the integrated chip?

Answer:

The abstract does not elaborate on the specific role of the dielectric layer in the functionality of the integrated chip. A more in-depth analysis of the patent application or related documents may shed light on the significance of the dielectric layer in this technology.

Original Abstract Submitted

An integrated chip including a gate layer. An insulator layer is over the gate layer. A channel structure is over the insulator layer. A pair of source/drains are over the channel structure and laterally spaced apart by a dielectric layer. The channel structure includes a first channel layer between the insulator layer and the pair of source/drains, a second channel layer between the insulator layer and the dielectric layer, and a third channel layer between the second channel layer and the dielectric layer. The first channel layer, the second channel layer, and the third channel layer include different semiconductors.