18149260. PHOTONIC SEMICONDUCTOR-ON-INSULATOR (SOI) SUBSTRATE AND METHOD FOR FORMING THE PHOTONIC SOI SUBSTRATE simplified abstract (Taiwan Semiconductor Manufacturing Co., Ltd.)

PHOTONIC SEMICONDUCTOR-ON-INSULATOR (SOI) SUBSTRATE AND METHOD FOR FORMING THE PHOTONIC SOI SUBSTRATE

Organization Name

Taiwan Semiconductor Manufacturing Co., Ltd.

Inventor(s)

Eugene I-Chun Chen of Taipei City (TW)

Kuan-Liang Liu of Pingtung City (TW)

De-Yang Chiou of Hsinchu City (TW)

Yung-Lung Lin of Taichung City (TW)

Chia-Shiung Tsai of Hsin-Chu (TW)

PHOTONIC SEMICONDUCTOR-ON-INSULATOR (SOI) SUBSTRATE AND METHOD FOR FORMING THE PHOTONIC SOI SUBSTRATE - A simplified explanation of the abstract

This abstract first appeared for US patent application 18149260 titled 'PHOTONIC SEMICONDUCTOR-ON-INSULATOR (SOI) SUBSTRATE AND METHOD FOR FORMING THE PHOTONIC SOI SUBSTRATE

Simplified Explanation

The abstract describes a method for forming a semiconductor-on-insulator (SOI) structure, involving the bonding of a first dielectric layer under a second semiconductor layer in a low-pressure environment.

• Formation of a first dielectric layer on a first semiconductor layer
• Formation of a second semiconductor layer over an etch stop layer
• Providing a cleaning solution to the first surface of the first dielectric layer
• Bonding the first dielectric layer under the second semiconductor layer in a low-pressure environment
• Formation of an index guiding layer over the second semiconductor layer
• Formation of a third semiconductor layer over the second semiconductor layer
• Performing a planarization process on the third semiconductor layer to reduce the maximum distance between layers

Potential Applications

The SOI structure can be used in the manufacturing of advanced semiconductor devices, such as high-performance integrated circuits, sensors, and microprocessors.

Problems Solved

1. Improved performance and reliability of semiconductor devices 2. Reduction of parasitic capacitance and leakage currents in integrated circuits

Benefits

1. Enhanced speed and efficiency of electronic devices 2. Increased integration density on a chip 3. Lower power consumption and improved battery life

Potential Commercial Applications

Optimizing the SOI structure for use in smartphones, tablets, laptops, and other consumer electronics can lead to faster and more energy-efficient devices, attracting a wide range of manufacturers.

Possible Prior Art

Prior art may include methods for forming SOI structures using different bonding techniques, materials, or processing conditions. Research on improving the performance of semiconductor devices through advanced material integration may also be relevant.

Unanswered Questions

What are the specific parameters for the low-pressure environment during the bonding process?

The abstract mentions bonding the dielectric layer under the semiconductor layer in a low-pressure environment, but the exact pressure levels or ranges are not specified.

How does the planarization process impact the overall performance of the SOI structure?

While the abstract mentions a planarization process to reduce the maximum distance between layers, it does not elaborate on the effects of this process on the final device performance or characteristics.

Original Abstract Submitted

A semiconductor-on-insulator (SOI) structure and a method for forming the SOI structure. The method includes forming a first dielectric layer on a first semiconductor layer. A second semiconductor layer is formed over an etch stop layer. A cleaning solution is provided to a first surface of the first dielectric layer. The first dielectric layer is bonded under the second semiconductor layer in an environment having a substantially low pressure. An index guiding layer may be formed over the second semiconductor layer. A third semiconductor layer is formed over the second semiconductor layer. A distance between a top of the third semiconductor layer and a bottom of the second semiconductor layer varies between a maximum distance and a minimum distance. A planarization process is performed on the third semiconductor layer to reduce the maximum distance.