18148810. RESISTOR WITH DOPED REGIONS AND SEMICONDUCTOR DEVICES HAVING THE SAME simplified abstract (SAMSUNG ELECTRONICS CO., LTD.)
RESISTOR WITH DOPED REGIONS AND SEMICONDUCTOR DEVICES HAVING THE SAME
Organization Name
Inventor(s)
MYUNGGIL Kang of Suwon-Si (KR)
SANGHOON Lee of Seongnam-Si (KR)
RESISTOR WITH DOPED REGIONS AND SEMICONDUCTOR DEVICES HAVING THE SAME - A simplified explanation of the abstract
This abstract first appeared for US patent application 18148810 titled 'RESISTOR WITH DOPED REGIONS AND SEMICONDUCTOR DEVICES HAVING THE SAME
Simplified Explanation
The abstract describes a resistor with a device isolation layer that includes active regions, a buried insulating layer, and an N well region. The N well region surrounds the active regions, the device isolation layer, and the buried insulating layer. The active regions have doped regions with n type impurities.
- The resistor includes a device isolation layer.
- It has a first active region and a second active region.
- It includes a buried insulating layer.
- It has an N well region surrounding the active regions, device isolation layer, and buried insulating layer.
- The first active region and second active region have doped regions with n type impurities.
Potential Applications
- Electronics manufacturing
- Circuit design
- Integrated circuits
Problems Solved
- Provides a resistor with improved device isolation
- Enhances the performance and reliability of electronic devices
Benefits
- Better isolation of active regions
- Increased performance and reliability of resistors
- Improved functionality of electronic devices
Original Abstract Submitted
A resistor including a device isolation layer is described that includes a first active region and a second active region, a buried insulating layer, and an N well region. The N well region surrounds the first active region, the second active region, the device isolation layer and the buried insulating layer. A first doped region and a second doped region are disposed on the first active region and the second active region. The first doped region and the second doped region are in contact with the N well region and include n type impurities.
