18148231. METAL FILL STRUCTURES FOR ISOLATORS TO MEET METAL DENSITY AND HIGH VOLTAGE ELECTRIC FIELD REQUIREMENTS simplified abstract (TEXAS INSTRUMENTS INCORPORATED)

METAL FILL STRUCTURES FOR ISOLATORS TO MEET METAL DENSITY AND HIGH VOLTAGE ELECTRIC FIELD REQUIREMENTS

Organization Name

TEXAS INSTRUMENTS INCORPORATED

Inventor(s)

Jeffrey Alan West of Dallas TX (US)

Elizabeth Costner Stewart of Dallas TX (US)

Thomas Dyer Bonifield of Dallas TX (US)

Byron Lovell Williams of Plano TX (US)

Kashyap Barot of Bangalore (IN)

Viresh Chinchansure of Bangalore (IN)

Sreeram N S of Bangalore (IN)

METAL FILL STRUCTURES FOR ISOLATORS TO MEET METAL DENSITY AND HIGH VOLTAGE ELECTRIC FIELD REQUIREMENTS - A simplified explanation of the abstract

This abstract first appeared for US patent application 18148231 titled 'METAL FILL STRUCTURES FOR ISOLATORS TO MEET METAL DENSITY AND HIGH VOLTAGE ELECTRIC FIELD REQUIREMENTS

Simplified Explanation

The microelectronic device described in the patent application includes a galvanic isolator with filler metal within an upper isolation element. The galvanic isolator consists of a lower isolation element, an upper isolation element, and an inorganic dielectric plateau between them. The upper isolation element contains tines of filler metal that are electrically connected to each other and to the upper isolation element. The ends of the tines are rounded to reduce electric fields, and the filler metal increases the overall metal density on the metal layer of the upper isolation element to meet modern microelectronic fabrication processing requirements.

• The device includes a galvanic isolator with filler metal in the upper isolation element.
• The galvanic isolator has a lower isolation element, an upper isolation element, and an inorganic dielectric plateau.
• Tines of filler metal in the upper isolation element are electrically connected to each other and the upper isolation element.
• The ends of the tines are rounded to minimize electric fields.
• The filler metal increases the metal density on the upper isolation element to meet modern fabrication processing requirements.

Potential Applications

The technology described in the patent application could be applied in:

• Microelectronic devices
• Integrated circuits
• Semiconductor manufacturing

Problems Solved

The technology addresses the following issues:

• Galvanic isolation in microelectronic devices
• Electric field minimization
• Metal density requirements in modern fabrication processes

Benefits

The benefits of this technology include:

• Improved galvanic isolation
• Enhanced electric field reduction
• Meeting metal density requirements for fabrication processes

Potential Commercial Applications

The technology could be utilized in various commercial applications such as:

• Consumer electronics
• Telecommunications equipment
• Automotive electronics

Possible Prior Art

One possible prior art could be the use of traditional galvanic isolators without filler metal in the upper isolation element.

Unanswered Questions

How does the filler metal impact the overall performance of the microelectronic device?

The article does not delve into the specific effects of the filler metal on the device's functionality and efficiency.

Are there any limitations or drawbacks associated with the use of filler metal in the upper isolation element?

The potential limitations or drawbacks of incorporating filler metal in the upper isolation element are not discussed in the article.

Original Abstract Submitted

A microelectronic device including a galvanic isolator with filler metal within an upper isolation element. The galvanic isolator includes a lower isolation element, an upper isolation element, and an inorganic dielectric plateau between the lower isolation element and the upper isolation element. The upper isolation element contains tines of filler metal which are electrically tied to each other and are electrically tied to the upper isolation element. The ends of the tines are rounded to minimize electric fields. The filler metal increases the overall metal density on the metal layer of the upper isolation element to meet the typical metal density requirements of modern microelectronic fabrication processing.