18145597. CAPACITOR AND SEMICONDUCTOR DEVICE INCLUDING THE SAME simplified abstract (SAMSUNG ELECTRONICS CO., LTD.)
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CAPACITOR AND SEMICONDUCTOR DEVICE INCLUDING THE SAME
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CAPACITOR AND SEMICONDUCTOR DEVICE INCLUDING THE SAME - A simplified explanation of the abstract
This abstract first appeared for US patent application 18145597 titled 'CAPACITOR AND SEMICONDUCTOR DEVICE INCLUDING THE SAME
Simplified Explanation
The patent application describes a capacitor and a semiconductor device that incorporates the capacitor. The capacitor consists of a first electrode, a second electrode positioned away from the first electrode, a dielectric film between the two electrodes, and an interfacial film that is in contact with the dielectric film and has a higher electron affinity than the dielectric film.
- The capacitor and semiconductor device include a first electrode and a second electrode.
- A dielectric film is placed between the first and second electrodes.
- An interfacial film is in contact with the dielectric film and has a higher electron affinity than the dielectric film.
Potential applications of this technology:
- This technology can be used in various electronic devices that require capacitors, such as smartphones, computers, and televisions.
- It can be utilized in power electronics, integrated circuits, and memory devices.
Problems solved by this technology:
- The interfacial film with a higher electron affinity helps to improve the performance and efficiency of the capacitor and semiconductor device.
- It reduces leakage current and enhances the stability and reliability of the device.
Benefits of this technology:
- The improved performance of the capacitor and semiconductor device leads to enhanced functionality and efficiency of electronic devices.
- The reduced leakage current increases the energy efficiency of the device.
- The enhanced stability and reliability of the device result in longer lifespan and reduced maintenance requirements.
Original Abstract Submitted
Provided are a capacitor and a semiconductor device including the capacitor. The capacitor and the semiconductor device include a first electrode; a second electrode provided apart from the first electrode, a dielectric film between the first electrode and the second electrode, and an interfacial film wholly or at least partially in contact with the dielectric film and having an electron affinity greater than an electron affinity of the dielectric film.
