18144350. SEMICONDUCTOR PACKAGE AND METHOD OF FABRICATING THE SAME simplified abstract (Samsung Electronics Co., Ltd.)
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SEMICONDUCTOR PACKAGE AND METHOD OF FABRICATING THE SAME
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SEMICONDUCTOR PACKAGE AND METHOD OF FABRICATING THE SAME - A simplified explanation of the abstract
This abstract first appeared for US patent application 18144350 titled 'SEMICONDUCTOR PACKAGE AND METHOD OF FABRICATING THE SAME
Simplified Explanation
The abstract describes a semiconductor package that includes a substrate, a first semiconductor chip, and a second semiconductor chip. The first semiconductor chip has two surfaces and two trenches formed on one surface, which intersect each other. The second semiconductor chip is placed on the first semiconductor chip in the region between the trenches.
- The first semiconductor chip has two surfaces, with trenches formed on one surface.
- The trenches extend in different directions and intersect each other.
- The second semiconductor chip is placed on the first semiconductor chip between the trenches.
Potential Applications:
- This semiconductor package can be used in various electronic devices such as smartphones, tablets, and computers.
- It can be utilized in power electronics, automotive electronics, and communication systems.
Problems Solved:
- The package design allows for efficient use of space by stacking semiconductor chips.
- The intersecting trenches provide a compact and integrated structure for the chips.
Benefits:
- The semiconductor package offers improved performance and functionality in electronic devices.
- It enables higher integration and miniaturization of electronic components.
- The design allows for better heat dissipation and electrical connectivity.
Original Abstract Submitted
A semiconductor package includes: a substrate; a first semiconductor chip disposed on the substrate, wherein the first semiconductor chip includes first and second surfaces, which are opposite to each other, and has first and second trenches formed on the first surface thereof, wherein the first and second trenches extend in first and second directions, respectively, wherein the first and second direction intersect each other; and a second semiconductor chip disposed on the first semiconductor chip and in a region between the first and second trenches.
